h-BN-assisted Metal Contact Transfer to InSe for Two-Dimensional Multifunctional Electronic Devices  

作　　者：Chijun Wei Nuertai Jiazila Xuanye Liu Peng Song Hui Gao Jiequn Sun Lihong Bao Xiao Lin Hong-Jun Gao 尉驰俊;努尔泰·加孜拉;刘轩冶;宋鹏;高辉;孙杰群;鲍丽宏;林晓;高鸿钧(School of Physical Sciences and CAS Key Laboratory of Vacuum Physics,University of Chinese Academy of Sciences,Beijing 100190,China;Beijing National Center for Condensed Matter Physics and Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China;Hefei National Laboratory,Hefei 230088,China)

机构地区：[1]School of Physical Sciences and CAS Key Laboratory of Vacuum Physics,University of Chinese Academy of Sciences,Beijing 100190,China [2]Beijing National Center for Condensed Matter Physics and Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China [3]Hefei National Laboratory,Hefei 230088,China

出　　处：《Chinese Physics Letters》2024年第12期210-225,共16页中国物理快报（英文版）

摘　　要：Metal contacts to two-dimensional(2D)semiconductors are crucial for determining the electrical performance of electronic devices.However,traditional three-dimensional metal deposition processes cause damage to 2D semiconductors and considerable Fermi-level-pinning effects.In this study,a hexagonal boron nitride(h-BN)-assisted transfer method was proposed for transferring metal contacts to few-layered InSe for fabricating 2D functional electronic devices.Using the transferred Pt electrodes as the contact,p-type dominated ambipolar conduction behavior with the hole Schottky barrier height(SBH)approaching 0meV was observed in field-effect transistors(FETs)comprising multilayered InSe.Based on this phenomenon,several InSe homojunctions were fabricated using a dual-gate modulating method such as p-p,n-n,p-n,and n-p.For InSe p-n homojunctions,a current rectification ratio of over 104 and optoelectronic detection capabilities were achieved.Furthermore,a complementary metal-oxide-semiconductor(CMOS)inverter with an ultra-high voltage gain exceeding 60 at VDD=−1V was fabricated.The proposed h-BN-assisted metal contact transfer method can be easily extended to other 2D semiconductors for fabricating complementary electronic and optoelectronic devices.

关 键 词：COMPLEMENTARY SEMICONDUCTORS EXCEEDING 

分 类 号：O469[理学—凝聚态物理] TN03[理学—电子物理学]