基于InSe/MoTe_(2)异质结构的超灵敏宽光谱光电探测器  

Ultrasensitive and broad-spectrum photodetectors based on InSe/MoTe_(2) heterostructure

作　　者：邢艳辉[1] 贺雯馨 韩梓硕 关宝璐[1] 马海鑫 马晓辉 韩军[1] 时文华[3] 张宝顺[3] 吕伟明 曾中明[3] XING Yan-Hui;HE Wen-Xin;HAN Zi-Shuo;GUAN Bao-Lu;MA Hai-Xin;MA Xiao-Hui;HAN Jun;SHI Wen-Hua;ZHANG Bao-Shun;LYU Wei-Ming;ZENG Zhong-Ming(Key Laboratory of Opto-electronics Technology,Ministry of Education,College of Microelectronics,Beijing University of Technology,Beijing 100124,China;State key Laboratory of High Power semiconductor laser of Changchun University of Science and Technology,Changchun 130022,China;Nanofabrication Facility,Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou 215123,China)

机构地区：[1]北京工业大学微电子学院光电子技术教育部重点实验室,北京100124 [2]长春理工大学高功率半导体激光国家重点实验室,吉林长春130022 [3]中国科学院苏州纳米技术与纳米仿生研究所纳米加工平台,江苏苏州215123

出　　处：《红外与毫米波学报》2024年第3期314-321,共8页Journal of Infrared and Millimeter Waves

基　　金：the National Natural Science Foundation of China(60908012,61575008,61775007,61874145,62074011,62134008);National Key Research and Development Program of China(2018YFA0209000,2021YFC2203400,2021YFA1200804);the Beijing Natural Science Foun⁃dation(4172011,4202010);Beijing Nova Program(Z201100006820096)。

摘　　要：基于光栅效应的二维材料垂直结构可实现高灵敏度和宽光谱光探测器。本文报告了一种基于硒化铟(InSe)/二碲化钼(MoTe_(2))垂直异质结构的高灵敏度光电探测器,该探测器在365~965 nm波长范围内具有出色的宽光谱探测能力。顶层的InSe用作调节沟道电流的光栅层,MoTe_(2)则用作传输层。通过结合两种材料的优势,该光电探测器的响应时间为21.6 ms,比探测率在365 nm光照下可以达到1.05×10^(13)Jones,在965 nm光照下也可达到109 Jones数量级。外量子效率可达1.03×10^(5)%,显示出强大的光电转换能力。The photogating effect based on the vertical structure of a two-dimensional material allows high-sensi⁃tivity and broad-spectrum photodetector.A high-sensitivity photodetector based on the vertical heterostructure of indium selenide(InSe)/molybdenum ditelluride(MoTe_(2))is reported,which exhibits excellent broad-spectrum de⁃tection capability from 365 to 965 nm.The top layer of InSe was used as the grating layer to regulate the channel current,and MoTe2 was used as the transmission layer.By combining the advantages of the two materials,the photodetector has a fast response time of 21.6 ms and achieves a maximum detectivity of 1.05×10^(13)Jones under 365 nm laser irradiation.Under the illumination of 965 nm,the detectivity still achieves the order of 109 Jones.In addition,the InSe/MoTe_(2)heterostructure exhibits an external quantum efficiency of 1.03×10^(5)%,demonstrating strong photoelectric conversion capability.

关 键 词：二维材料 宽带光电探测器 光栅效应 超灵敏 

分 类 号：TN214[电子电信—物理电子学]