氧化锌薄膜晶体管的光诱导不稳定性  

Photo-Induced Instability of ZnO-Based Thin Film Transistors

作　　者：王聪[1] 刘玉荣[1,2] 李星活[3] 苏晶[1] 姚若河[1,2] 

机构地区：[1]华南理工大学电子与信息学院,广东广州510640 [2]华南理工大学广东省短距离无线探测与通信重点实验室,广东广州510640 [3]汕尾职业技术学院电子信息系,广东汕尾516600

出　　处：《华南理工大学学报（自然科学版）》2013年第6期11-16,共6页Journal of South China University of Technology(Natural Science Edition)

基　　金：国家自然科学基金资助项目(61076113;61274085);广东省自然科学基金资助项目(8451064101000257)

摘　　要：为促进氧化锌薄膜晶体管(ZnO-TFT)在有源驱动平板显示领域中的实际应用,以高纯氧化锌(ZnO)为靶材,采用射频磁控溅射法沉积ZnO薄膜作为半导体活性层,制备出ZnO-TFT,研究了可见光诱导引起的器件特性的不稳定性.实验结果表明:在可见光照射下,该ZnO-TFT器件呈现出一定程度的不稳定性;随着光照强度的增加,迁移率稍有增大,阈值电压有微弱的减小;漏电流的相对变化量受栅电压控制,即在开态时相对变化量较小,对于2210 lx的照射强度,相对变化量的最小值为0.58,而在亚阈值区和关态时,漏电流受光照强度的影响较大,在相同强度的光照射下相对变化量的最大值为36.29.对可见光诱导不稳定性恢复过程的研究发现,光照关断后的恢复过程相对缓慢,且随时间呈现出先快后慢的现象.In order to promote the commercial application of ZnO-based thin film transistors（ZnO-TFTs） to activedriving flat display field,TFTs with ZnO as the channel layer were fabricated via the RF（Radio Frequency） magnetron sputtering with undoped ZnO target.Then,the photo-induced instability of the devices was investigated under visible light illumination.Experimental results indicate that（1） the ZnO-TFT device exhibits light-induced instability under visible light illumination;（2） with the increase of illumination intensity,the carrier mobility of the device slightly increases,while the threshold voltage weakly reduces;and（3） the relative variation of drain current is strongly modulated by gate voltage,for instance,it becomes smaller with a minimum of 0.58 at 2 210 lx when the device operates in the on-state mode,but becomes larger with a maximum of 36.29 at the same illumination intensity when the device operates in the subthreshold or off-state mode.Moreover,it is also found that,the recovery of the photo-induced instability is relatively slow and tends to slow down with the passage of time.

关 键 词：薄膜晶体管 氧化锌 光诱导 稳定性 

分 类 号：TN321.5[电子电信—物理电子学]