MEVVA源金属离子注入和金属等离子体浸没注入  

MEVVA Ion Implantation and Metal Plasma Immersion Ion Implantation

作　　者：张涛[1] 侯君达[1] 

机构地区：[1]北京师范大学低能核物理所

出　　处：《中国表面工程》2000年第3期8-12,共5页China Surface Engineering

基　　金：国家863高技术项目资助!(863-715-008-0040)

摘　　要：MEVVA源金属离子注入技术和金属等离子体浸没注入技术MePIII的共同特性是强流金属离子注入。它们各具长处，相互补充，共同发展。前者因无鞘层重叠问题和其方向强的特点，特别适用于小件、简单件的大批量金属离子注入处理，能保证处理的均匀性和高效率。后者因无视线加工限制并克服了保持剂量问题，特别适用于处理体积较大、形状复杂的工件，能保证工件所有暴露表面的加工均匀性，调整工作参数，还能进行金属膜沉积和各种沉积/注入比例的动态增强沉积金属、合金及化合物膜制备。综述上述二者的开发、工作原理、材料表面改性研究和工业应用新进展。MEVVA source and metal plasma immersion ion implantation techniques were invented in 1980s and 1990s.They are characterized by high flux metal ion implantation and have developed rapidly in the past decade. They have shown advantages in the processing of material surface.MEVVA ion implantation is suitable for the batch processing of simple and small size workpieces because of its line of sight and non sheath coinciding characters.MePIII is suitable for the processing of complex and big workpieses because it is free from line of sight restriction and retained dose problem.Alos MiPIII can make a hybrid of metal ionimplantation and film depostion at any implantation/deposition ratio,the so called dynamic metal plasma immersion ion enhanced deposition.In this paper the development,principle and application to materials fabrication of these facilitieswere described.

关 键 词：金属离子注入 MEVVA源 PIll技术 

分 类 号：TG174.444[金属学及工艺—金属表面处理]