注F栅介质抗电离辐射损伤机理  

Mechanism of Ionizing Radiation Hardness in Fluorinated MOS Oxides

作　　者：张国强[1] 余学锋[1] 陆妩[1] 范隆[1] 郭旗[1] 任迪远[1] 严荣良[1] 

机构地区：[1]中国科学院新疆物理研究所,乌鲁木齐830011

出　　处：《固体电子学研究与进展》2000年第3期302-308,共7页Research & Progress of SSE

摘　　要：对含 F MOS结构的抗电离辐射特性和机理进行了系统研究。其结果表明 :F减少工艺过程引入栅介质的 E’中心缺陷和补偿 Si/ Si O2 界面 Si悬挂键的作用 ,将导致初始氧化物电荷和界面态密度的下降 ;栅 Si O2 中的 F主要以 F离子和 Si- F结键的方式存在 ;含 F栅介质中部分 Si- F键替换 Si- O应力键而使 Si/ Si O2 界面应力得到释放 ,以及用较高键能的 Si- F键替换 Si- H弱键的有益作用是栅介质辐射敏感性降低的根本原因 ;含 F CMOS电路辐射感生漏电流得到抑制的主要原因是场氧介质中氧化物电荷的增长受到了明显抑制。The ionizing radiation effects and hardness mechanism in fluorinated MOS structures have been investigated systematically. The experimental data have shown that reducing E’ center and tri valence silicon dangling bond defects at Si/SiO 2 interface in fluorinated oxides result in less generation of initial oxide charges and interface states induced by processes. The existing form of fluorine in fluorinated gate oxides is mainly the F ions and Si F bonding. The relaxation of Si/SiO 2 interface stress due to the replacement of Si O strain bonds by Si F bonds and the replacement of Si H weak bonds by Si F strong bonds is the mechanism of ionizing radiation hardening. The decreasing radiation induced leakage currents in fluorinated CMOS circuits should be attributed to less formation of oxide charges in field oxides.

关 键 词：含氟介质 电离辐射 氧化物电荷 界面态 损伤机理 

分 类 号：TN406[电子电信—微电子学与固体电子学]