GaAs中碳受主局域振动模积分吸收的温度关系  

Temperature Dependence of the Integrated Area of the Local Vibrational Mode Absorption for Carbon Acceptor in GaAs

作　　者：杨瑞霞[1] 李光平[2] 付浚[1] 陈国鹰[1] 孙以才[1] 

机构地区：[1]河北工业大学电子系,天津300130 [2]天津电子材料研究所,天津300192

出　　处：《固体电子学研究与进展》2000年第3期324-329,共6页Research & Progress of SSE

基　　金：河北省自然科学基金资助项目!(编号 195 0 5 1);中国科学院半导体材料实验室资助项目

摘　　要：Ga As中碳 (C)受主局域振动模 (LVM)积分吸收的温度关系是一个受到广泛关注和研究的问题。但是 ,不同研究者得到的定量研究结果具有很大差异。迄今对导致这种差异的原因及积分吸收随温度变化的机理尚不完全清楚。本研究表明 ,二者均与 C受主 L VM主吸收带的低能边出现的一个吸收边带有关。该边带可能起因于 C受主 L VM第一激发态向第二激发态的跃迁。Many investigations have been carried out on the temperature dependence of the integrated area of the local vibrational mode absorption for carbon acceptor in GaAs. However, the experimental results by different investigators are considerably quite different. So far, the origin of the spread in these experimental results and the mechanism why the integrated area varies with temperature are not fully understood. In this paper, it is shown that both of them are related to the appearance of a sideband on the low energy side of the local vibrational mode main absorption band of carbon acceptor. It is likely that the sideband originates from the transition of the local vibrational mode of carbon from the first excited state to the second excited state.

关 键 词：碳受主 局域振动模 激发态 砷化镓 

分 类 号：TN304.23[电子电信—物理电子学]