IGBT串联阀吸收电路的研究  

Study on Snubber Circuit of Series Connected IGBT′s

作　　者：范镇淇 侯凯 李伟邦 

机构地区：[1]国网智能电网研究院电力电子所,江苏南京210003

出　　处：《电气传动》2013年第7期72-76,共5页Electric Drive

基　　金：国家级大规模集成电路制造技术及成套工艺(国家02专项)资助项目(2011ZX02603-005;2011ZX02503-006)

摘　　要：绝缘栅双极型晶体管IGBT综合了GTR和MOSFET的优点,近年来得到了广泛的应用,但是受限于耐压等级,单个IGBT高压大功率电能变换场合还不能满足需求,而串联使用是一种较好的解决方案。在串联使用中为了抑制器件关断过程中产生浪涌过冲,仍然需要吸收电路进行保护。通过对比分析详细阐述了RCD吸收电路在IGBT串联中的使用优势,并给出了参数选取的原则,同时分析了RCD吸收电路对器件动、静态电压均压的影响,并通过实验予以了验证。Isolate gate bipolar transistor （IGBT） combines the advantage of GTR and MOSFET, which has been widely used in recent years. However, due to the voltage level, single IGBT cannot meet the requirements of high- power power converting. In such application fields, serial connection of IGBT＇s s is a good solution. In a serial IGBT valve, snubber circuit is indispensable to suppress voltage overshoot while IGBT switching from on state to off state. By analyzing the different snubber circuits, why RCD snubber circuit could be used in IGBTts serial connection was described, and gave the principle of parameter selection. Then investigated how the RCD snubber circuit influenced voltage balance in IGBT ~s serial connection, and the results were verified by experiment.

关 键 词：IGBT串联 吸收电路 均压 关断浪涌电压 

分 类 号：TM86[电气工程—高电压与绝缘技术]