低压化学气相沉积生长双层石墨烯及其电输运特性研究  

Low Pressure Chemical Vapor Deposition Synthesis and Transport Properties of Graphene

作　　者：曾亭[1] 吴革明[1] 赵鸿滨[1] 杨萌萌[1] 魏峰[1] 杜军[1,2] 

机构地区：[1]北京有色金属研究总院先进电子材料研究所,北京100088 [2]北京有色金属研究总院国家半导体材料工程研究中心,北京100088

出　　处：《稀有金属》2013年第4期583-589,共7页Chinese Journal of Rare Metals

基　　金：国家自然科学基金项目(50932001;51102020)资助

摘　　要：采用低压化学气相沉积法(LPCVD)以铜箔为生长衬底来制备石墨烯。XRD表征得石墨烯生长前后铜箔衬底主要为(100)晶面,而且铜箔在高温下退火晶粒明显长大有利于高质量石墨烯的生长。拉曼光谱表明所制备的石墨烯为双层结构。通过转移、刻蚀等工艺制备了石墨烯场效应晶体管(G-FET)原型器件,其转移特性曲线(IDS-VGS)表明所制备的石墨烯表现为p型输运特性。在器件中石墨烯的XPS图谱说明了石墨烯吸附有有机物基团,导致p型特性的部分原因。同时本文研究了真空退火对G-FET器件性能的影响,结果表明:退火温度为200℃时,G-FET的空穴载流子迁移率最佳;而随着温度增加,开关比(ON-OFF ratio)在不断减小,载流子迁移率迅速在降低。In this report, a low pressure chemical vapor deposition （LPCVD） was developed for the growth of graphene on Cu foils. Cu foils with （100） orientation was clearly observed in X-ray diffraction （XRD） pattern and nothing changed before or after graphene growth; and copper grain grown up obviously at high temperature was found to benefit the growth of high-quality graphene. Raman spectra suggested that the deposited graphene films were of bilayer. The graphene field effect transistor （G-FET） model device was fab- ricated with graphene ribbon as channel by removal and lithographic process. The transfer characteristic curve （IDS-VGS） of the typi- cal G-FET device was analyzed and the prepared graphene represented p-type transport characteristic. XPS spectrum of graphene in the device suggested that the graphene adsorbed organic group to make the graphene display p-type characteristic. Meanwhile, the effect of the vacuum annealing on the characteristic of the G-FET device was studied. The results suggested the mobilities for hole carriers of G- FET achieved optimum when the devices were annealed at 200℃ in the vacuum; the ON-OFF ratio minished quickly along with the temperature. The mobilities of the graphene started to degrade rapidly after annealed at 200℃.

关 键 词：石墨烯 低压化学气相沉积法 RAMAN光谱 光刻和刻蚀 退火 输运特性 

分 类 号：O613.11[理学—无机化学]