Geant4模拟中子在碳化硅中产生的位移损伤  

Geant4 Simulation of Neutron Displacement Damage in SiC

作　　者：郭达禧[1] 贺朝会[1] 臧航[1] 席建琦[1] 马梨[1] 杨涛[1] 张鹏[1] 

机构地区：[1]西安交通大学核科学与技术学院,陕西西安710049

出　　处：《原子能科学技术》2013年第7期1222-1228,共7页Atomic Energy Science and Technology

摘　　要：利用Geant4模拟了中子在碳化硅中的输运过程,计算了不同能量中子产生的位移缺陷数目,获得了14.1MeV中子产生的位移缺陷分布。研究了中子产生位移损伤过程的影响要素,分析了弹性散射与去弹过程对位移损伤产生过程的贡献,并对中子各阶段反应产生的位移缺陷分布及对总体缺陷分布的影响进行了探讨。The transport of neutron in SiC was simulated with the Geant4.The number of displacement damage induced by different energy neutrons was calculated and the distribution of displacement damage of 14.1 MeV neutron was obtained.The factors that impact the production of displacement damage were studied,and the contributions of elastic scattering and non-elastic process to defect production were analyzed.The damage profile induced by neutron reaction of each stage was obtained,and the influences on the distribution of total damage were further investigated.

关 键 词：中子 碳化硅 位移损伤 GEANT4 

分 类 号：TL341[核科学技术—核技术及应用]