FFEA电场及电子轨迹模拟讨论  

Simulation of Electric Field and Electron Trajectory of Focus Field Emission Arrays

作　　者：屈晓声[1] 李得杰[1] 姚保纶 

机构地区：[1]清华大学电子工程系,北京100084

出　　处：《真空科学与技术》2000年第5期308-310,共3页Vacuum Science and Technology

摘　　要：采用有限差分法 ,对有聚焦极的垂直双门结构的场发射阵列进行了轴对称三维模拟计算 ,得到发射微尖附近的电位和电子轨迹分布图。分别讨论了聚焦极电位、聚焦极孔径以及栅极电位对发射电子束的影响。聚焦极电位相对栅极越负 ,聚焦作用越强。减小聚焦极孔径对大发散角的电子有影响 ,但对聚焦作用的影响不如改变电位明显。栅极电位基本上不影响电子的轨迹 ,仅改变了发射电子的多少。The spatial electric potential distribution and the electron trajectory near the microtips in the double gate focus field emission array (FFEA)were simulated with finite difference technique.Influence of focus electrode bias,focus hole size and grid electrode bias on the emission electron beams was discussed.The simulated results show that the more negative the potential difference between the focus electrode and the grid electrode is,the better the emission electron beam focuses.Reduction of the focus hole diameter strongly affects the electrons with large emission angle but its influence on electron focusing is less markedly than the influence of the variations in potential.Bias of the grid electrode affects the number of emission electrons but has little effect on the electron trajectory.The simulated results are in good agreement with the experiment.

关 键 词：有限差分 聚焦场发射阵列 电子运动轨迹 

分 类 号：O462.4[理学—电子物理学]