Mo_2C膜表面粗糙化规律的计算机模拟  

Simulation of the Roughening Law for Mo_2C Film Surface

作　　者：冉扬强[1] 郑瑞伦[1] 陈洪[1] 平荣刚[1] 吕弋[2] 

机构地区：[1]西南师范大学物理系,重庆400715 [2]西南师范大学化学系,重庆400715

出　　处：《Chinese Journal of Chemical Physics》2000年第4期461-467,共7页化学物理学报（英文）

摘　　要：引入晶粒边界修正，改进了Ｍｏ２Ｃ膜表面粗糙化物理模型，将ＤＴ２模型推广到包括有温度的情况，对Ｍｏ２Ｃ膜表面形态进行计算机模拟并统计模拟图的高度分布，确定表面粗糙度随沉积时间和基底温度的变化规律。结果表明：引入晶粒边界修正大大促进了理论与实验结果的一致， Ｍｏ２Ｃ膜表面粗糙化属快速粗造化，粗造度随基底温度升高而非线性地增大。The roughening physics model of Mo2C film surface is improved by introduction the crystalin boundary. The DT2 model is extended by including the temperature. The surface of thin Mo2C film is simulated in computer and the hight of difference distribution is given by means of statistics. The change of roughness with deposited time and temperature is determined. The obtained results show that, the agreement with experimental date is improved by crystalline boundary. The roughening of Mo2C film is rapid roughening and the rougheness increase with increasing the substrate temperature rapidly.

关 键 词：MO2C膜 计算机模拟 表面粗造度 表面形态 

分 类 号：O484[理学—固体物理]