采用新型电流舵结构的增益可调UWBLNA  

A variable gain UWB LNA adopting a novel current steering structure

作　　者：张卿远[1] 张万荣 丁春宝[1] 邢光辉[1] 周孟龙[1] 高栋[1] 鲁东[1] 霍文娟[1] 邵翔鹏[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100124

出　　处：《电子技术应用》2013年第8期33-36,共4页Application of Electronic Technique

摘　　要：基于TSMC 0.18μm CMOS工艺,设计了一款工作在3 GHz^5 GHz频段的增益可调超宽带低噪声放大器(LNA)。LNA输入级采用局部反馈的共栅结构,实现了超宽带输入匹配和良好的噪声性能;放大电路级采用提出的新型电流舵结构,实现了放大器增益连续可调;输出级采用源极跟随器,获得了良好的输出匹配。利用ADS2009进行仿真验证,结果表明,在3 GHz^5 GHz工作频段内,LNA获得了25 dB的增益可调范围,最高增益达到24 dB,输入端口反射系数小于-11 dB,输出端口反射系数小于-14 dB,最小噪声系数为2.3 dB,三阶交调点(IIP3)为4 dBm,在1.2 V电压下,电路功耗仅为8.8 mW。A variable gain UWB LNA operating in 3 GHz^5 GHz frequency range is presented based on TSMC 0.18 Ixm standard CMOS process. A common-gate structure with a local feedback stage is adopted in the input stage of the LNA to achieve ultra wideband input match and optimize the noise performance. A novel current steering structure is proposed to realize the continuous variable gain of amplifiers. The output stage employs a source-follower to achieve excellent output match. The LNA is simulated and verified with ADS2009, the results show that the LNA operating in 3 GHz^5 GHz frequency range can realize a continuous gain tuning range of 25 dB, a maximum gain of 24 dB, an input reflection of less than -11 dB, an output reflection of less than -14 dB, a minimum noise figure of 2.3 dB, and an IIP3 of 4 dBm. The LNA consumes only 8.8 mW with a 1.2 V power supply.

关 键 词：超宽带 CMOS 增益可调 低噪声放大器 

分 类 号：TN721.1[电子电信—电路与系统]