本征层工艺参数对微晶硅太阳电池开路电压的影响  

Influence of Deposition Characters of the Intrinsic Layers on the Open-circuit Voltage of Microcrystalline Silicon Solar Cells

作　　者：陈阳洋[1] 雷青松[1] 曾祥斌[1] 何俊刚[1] 薛俊明 孙小虎[1] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074 [2]河北汉盛光电科技有限公司,河北衡水053000

出　　处：《微电子学与计算机》2013年第8期94-97,102,共5页Microelectronics & Computer

摘　　要：采用甚高频等离子化学增强气相沉积系统(VHF-PECVD)制备器件质量级本征微晶硅薄膜,研究薄膜的光电性质和结晶性质.结果表明:随硅烷浓度增加,薄膜材料的光敏性增加,晶化率减小;辉光功率增加,薄膜材料的光敏性减小,晶化率增加.将本征微晶硅薄膜应用到微晶硅薄膜太阳电池中,测试电池的I-V特性,获得开路电压.结果表明:硅烷浓度增加,电池的开路电压增加;辉光功率增加,电池的开路电压减小.A series of intrinsic microcrystalline silicon thin films were deposited by VHF-PECVD technology at different silane concentration and plasma power.The photoelectric property and Raman crystallinity of these thin films were investigated.Results show that the photosensitivity increased and Raman crystallinity decreased as silane concentration increased.And the photosensitivity decreased and Raman crystallinity increased as plasma power decreased.The i-μc-Si：H thin films were used in μc-Si solar cells then the open-circuit voltages were acquired from I-V measurements.Experimental data show that the open-circuit voltage increase as silane concentration increased/plasma power decrease.

关 键 词：微晶硅 硅烷浓度 辉光功率 开路电压 

分 类 号：TM914.4[电气工程—电力电子与电力传动]