锂掺杂氧化锌薄膜晶体管的研究  

Preparation and Characterization of Li-Doped ZnO Thin Film Transistors

作　　者：郭建[1] 金礼[1] 梁波[1] 王江[1] 

机构地区：[1]湘潭大学材料与光电物理学院,湖南湘潭411105

出　　处：《湘潭大学自然科学学报》2013年第2期17-19,共3页Natural Science Journal of Xiangtan University

摘　　要：采用溶胶凝胶法(sol-gel)在P型硅基底制备了锂掺杂氧化锌薄膜.以锂掺杂氧化锌薄膜为沟道层,制备了底栅结构的薄膜晶体管.XRD实验结果表明,500℃退火得到的锂掺杂氧化锌薄膜为纤锌矿结构,具有c轴择优取向.SEM实验结果说明,薄膜晶粒大小约为25nm,尺度分布均匀.电学测试结果显示器件是N沟道增强型.Li-doped ZnO （ZLO） films were prepared by sol-gel technique on P-type silicon. With ZLO films as channel layers, bottom gate thin film transistors were fabricated. The XRD results showed the ZLO films were wurtzite structure with c-axis orientation at the heat-treatment of 500℃ . The SEM experiments indicated that the ZLO films were uniform and the grain size was about 25 nm. The I-V property of ZLO- TFTs implied the devices were N-channel enhanced thin film transistors.

关 键 词：薄膜晶体管 溶胶凝胶 锂掺杂 氧化锌 

分 类 号：TB34[一般工业技术—材料科学与工程]