多晶硅中杂质含量、分布及其检测方法的探讨  

Discussion of Concentration,Distribution and Detection Methods of Impurities in Polysilicon

作　　者：李闻笛[1] 廉景燕[2] 丛山[3] 

机构地区：[1]天津大学化工学院,天津300072 [2]天津理工大学化学化工学院,天津300384 [3]精馏技术国家工程研究中心,天津300072

出　　处：《化学工业与工程》2013年第4期73-78,共6页Chemical Industry and Engineering

摘　　要：多晶硅中杂质的组成及含量是衡量多晶硅产品质量的重要指标之一,由于其杂质组成复杂、含量低于常规检测方法检出限,这就使对多晶硅中杂质含量、分布及检测方法的研究具有重要意义。概述了目前用于检测分析多晶硅中杂质含量、分布的方法及其优缺点;总结了近年来国内外在多晶硅杂质检测方法研究中的进展以及多晶硅中杂质的含量和分布数据,为多晶硅的检测提供了参考。Composition and concentration of impurities in polysilicon are important factors determining the quality of polysilicon production.Due to the complex composition and the trace concentration of impurities which are below the limit of traditional detection methods,it had great significance for the discussion of concentration and distribution of impurities in polysilicon.In this paper,the advantages and disadvantages of different detection methods used for analysising and detecting the concentration and distribution of impurities were summarized.Progress in research of detection methods and data of concentration as well as distribution were also discussed,which may provide a reference for the detection of polysilicon.

关 键 词：多晶硅 杂质 含量 分布 检测方法 

分 类 号：O657.3[理学—分析化学]