室温沉积Cu/ZnO薄膜的光电性能的研究  

Study on the optical and electrical properties of Cu/ZnO films deposited at room temperature

作　　者：王昊午 张新安[1] 丁玲红[1] 李国强[1] 张伟风[1] 

机构地区：[1]河南省光伏材料重点实验室,河南大学物理与电子学院,开封475004 [2]许继电气股份有限公司,许昌461000

出　　处：《化工新型材料》2013年第7期131-133,共3页New Chemical Materials

摘　　要：以ZnO陶瓷靶和金属Cu靶为基础在室温条件下利用直流磁控溅射和射频磁控溅射技术在玻璃衬底上制备了ZnO/Cu多层透明导电薄膜。通过改变溅射金属Cu层的时间等工艺参数,并采用紫外-可见-近红外(UV-Vis-NIR)分光光度计和霍尔测试仪对ZnO/Cu多层结构薄膜的光电性质等进行了分析和研究。ZnO/Cu多层透明导电薄膜的导电性随金属层溅射时间增加有很大的提高,从薄膜的透射谱中发现,Cu层的引入降低了多层结构的可见光透光率。随着多层结构薄膜载流子浓度的增加薄膜的光学带隙Eg下降。ZnO/Cu multilayers were prepared on glass substrates by RF magnetron sputtering of ZnO and DC mag- netron sputtering of Cu at room temperature based on a oxide ceramic disk of ZnO and metal Cu targets. The sputtering time of copper layer was changed, and used UV-VIS spectrometer and Hall effect measurement system to measuring charac- teristics such as optical and electrical properties o{ fabrics. The sputtering time of metal layer plaied an important role in de- termining the photoelectric property of the films. As the sputtering time of copper layer was increased, the electrical proper- ties of films were improved greatly by introducing a Cu under layer. However, the sputtering time of Cu films affected the optical properties in the visible wavelength region such as reduced transmittance. The transmission spectrum of multilayer films introduced a Cu layer declined rapidly with sputtering time of the copper layer extending and showed decreasing in the average transmittance. The band gap Eg of the films was decreased with increasing carrier concentration of the films.

关 键 词：CU ZNO 磁控溅射 透明导电薄膜 

分 类 号：TB43[一般工业技术]