石墨烯纳米带场效应管结构优化  

Structure Optimization of Graphene Nanoribbon Field Effect Transistors

作　　者：赵磊[1] 赵柏衡[1] 常胜[1] 王豪[2] 黄启俊[1] 

机构地区：[1]武汉大学物理科学与技术学院,武汉430072 [2]武汉大学微电子与信息技术研究院,武汉430072

出　　处：《微纳电子技术》2013年第8期474-478,522,共6页Micronanoelectronic Technology

基　　金：国家自然科学基金资助项目(61204096;J1210061);高等学校博士点专项科研基金资助项目(20100141120040;20110141120074)

摘　　要：石墨烯纳米带场效应管(graphene nanoribbon field effect transistor,GNRFET)作为后硅基时代集成电路基础器件的有力竞争者受到广泛关注。以数字电路应用为指向,基于密度泛函理论的计算仿真,对GNRFET的结构设计优化进行了研究。分析了宽度N=3m和N=3m+1(m为正整数)两系列半导体型石墨烯纳米带的传输特性,结果表明N=3m系的扶手椅型石墨烯纳米带(armchair GNR,AGNR)更适合作为晶体管的沟道。研究了掺杂对GNRFET性能的影响,得到明显n型特性,并确定了掺杂位置;探讨了沟道长度对器件的影响,得到了较大的开关电流比(约1 700)和较小的亚阈值摆幅(30～40 mV/decade)。这些优化手段有效提高了GNRFET的性能,可指导其设计和制备。As an excellent candidate of the integrated circuit basic device in the after-silicon era, the graphene nanoribbon field effect transistor （GNRFET） attracts widely attention. With the direction of the digital circuit application, the structural design optimization of the GNRFET was researched based on the density functional theory calculation and simulation. The transfer charac- teristicses of two series of semiconductor graphene nanoribbons （GNRs） with the widths of N = 3m and N = 3m＋ 1 （where m is the positive integer） were analyzed. The results demonstrate that the armchair GNR （AGNR） with the width of N = 3m is more suitable as the channel of the GN- RFET. Besides that, the effect of the doping on the properties of the GNRFET was studied, and the typical n-type behavior was obtained and the doping position was confirmed. Meanwhile, the influence of the channel length on the device properties was researched, the large switch current ratio （about 1 700） and little subthreshold swing （30 - 40 mV/decade） were achieved through the optimization of the channel length. The performance of the GNRFET was improved obviously with these optimization methods, which would guide the design and fabrication of the GNRFET.

关 键 词：石墨烯纳米带场效应管(GNRFET) 结构优化 掺杂 开关电流比 亚阈值摆幅 

分 类 号：O472.4[理学—半导体物理] TN386.2[理学—物理]