Point defect determination by photoluminescence and capacitance-voltage characterization in a GaN terahertz Gunn diode  

作　　者：李亮 杨林安 周小伟 张进成 郝跃 

机构地区：[1]School of Microelectronics, Key Laboratory of Wide Bandgap Semiconductor Materials and Devices of Ministry of Education,Xidian University

出　　处：《Chinese Physics B》2013年第8期563-567,共5页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.61076079 and 61274092);the Doctoral Program Fund of the Ministry of Education of China(Grant No.20090203110012);the Major Program and State Key Program of the National Natural Science Foundation of China(GrantNo.60890191)

摘　　要：Photoluminescence （PL） measurement is used to study the point defect distribution in a GaN terahertz Gunn diode, which is able to the degrade high-field transport characteristic during further device operation. PL, secondary ion mass spectroscopy （SIMS）, transmission electron microscope （TEM）, and capacitance-voltage （C-V） measurements are used to discuss the origin of point defects responsible for the yellow luminescence in structures. The point defect densities of about 1011 cm-2 in structures are extracted by analysis of C-V characterization. After thermal annealing treatment, diminishments of point defect densities in structures are efficiently demonstrated by PL and C-V results.Photoluminescence （PL） measurement is used to study the point defect distribution in a GaN terahertz Gunn diode, which is able to the degrade high-field transport characteristic during further device operation. PL, secondary ion mass spectroscopy （SIMS）, transmission electron microscope （TEM）, and capacitance-voltage （C-V） measurements are used to discuss the origin of point defects responsible for the yellow luminescence in structures. The point defect densities of about 1011 cm-2 in structures are extracted by analysis of C-V characterization. After thermal annealing treatment, diminishments of point defect densities in structures are efficiently demonstrated by PL and C-V results.

关 键 词：GaN terahertz Gunn diode point defect PHOTOLUMINESCENCE CAPACITANCE-VOLTAGE 

分 类 号：TN31[电子电信—物理电子学]