云南高校图书馆联盟文献共享服务平台- CAPACITANCE-VOLTAGE

CAPACITANCE-VOLTAGE: 作品数：19被引量：8H指数：2; 导出分析报告; 相关领域：电子电信理学更多>>; 相关作者：李剑锋孙涛更多>>; 相关机构：首钢日电电子有限公司更多>>; 相关期刊：《International Journal of Communications, Network and System Sciences》《Journal of Semiconductors》《World Journal of Nano Science and Engineering》《Chemical Research in Chinese Universities》更多>>; 相关基金：国家自然科学基金国家重点基础研究发展计划霍英东教育基金更多>>

Accurate capacitance-voltage characterization of organic thin films with current injection: 《Chinese Physics B》2021年第8期462-468,共7页Ming Chu Shao-Bo Liu An-Ran Yu Hao-Miao Yu Jia-Jun Qin Rui-Chen Yi Yuan Pei Chun-Qin Zhu Guang-Rui Zhu Qi Zeng Xiao-Yuan Hou; Project supported by the National Natural Science Foundation of China(Grant Nos.11874007 and 12074076).; To deal with the invalidation of commonly employed series model and parallel model in capacitance-voltage(C-V)characterization of organic thin films when current injection is significant,a three-element equivalent cir...; 关键词：current injection organic thin film CAPACITANCE-VOLTAGE parasitic resistance

C-V characteristics of piezotronic metal-insulator-semiconductor transistor被引量：3: 《Science Bulletin》2020年第2期161-168,88,共9页Jiayang Zheng Yongli Zhou Yaming Zhang Lijie Li Yan Zhang; the support from Swansea University,Solar Photovoltaic Academic Research Consortium(SPARC)Ⅱproject;University of Electronic Science and Technology of China.; Third generation semiconductors for piezotronics and piezo-phototronics,such as Zn O and Ga N,have both piezoelectric and semiconducting properties.Piezotronic devices normally exhibit high strain sensitivity because ...; 关键词：Piezotronic effect Capacitance-voltage(C-V)characteristics METAL-INSULATOR-SEMICONDUCTOR Distribution WIDTH of strain-induced piezoelectric CHARGES

Fabrication and modeling of multi-layer metal–insulator-metal capacitors: 《Journal of Semiconductors》2017年第12期32-36,共5页R Karthik A Akshaykranth; Project supported by the Science and Engineering Research Board(No.ECR/2016/001156); This paper presents the fabrication and modeling for capacitance-voltage characteristics of multi-layer metal-insulator-metal capacitors. It is observed that, due the applied electric field, the effective dielectric c...; 关键词：anodic oxidation dielectric HIGH-K MULTI-LAYER CAPACITANCE-VOLTAGE Maxwell-Wagner capacitor

High-frequency capacitance-voltage characteristics of the heterogeneous structure based on the model of spherical semiconductor particles in a dielectric: 《Journal of Advanced Dielectrics》2016年第3期42-49,共8页A.S.Tonkoshkur A.V.Ivanchenko; The dependence of the parameters of the capacitance effect in heterogeneous dispersed two-component structures based on semiconductors from the bulk fraction of the semiconductor component is modeled.The used method f...; 关键词：Heterogeneous structure capacitance-voltage characteristic dipole moment donor concentration varistor ceramics

Effect of size and position of gold nanocrystals embedded in gate oxide of SiO_(2)/Si MOS structures: 《Journal of Advanced Dielectrics》2016年第1期34-38,共5页Chaitali Chakraborty Chayanika Bose; The influence of single and double layered gold(Au)nanocrystals(NC),embedded in SiO_(2) matrix,on the electrical characteristics of metal–oxide–semiconductor(MOS)structures is reported in this communication.The size...; 关键词：NANOCRYSTALS MOS capacitance-voltage curve leakage current

Analysis of Capacitance-Voltage-Temperature Characteristics of GaN High-Electron-Mobility Transistors: 《Chinese Physics Letters》2015年第4期148-150,共3页赵妙刘新宇; Supported by the National Natural Science Foundation of China under Grant Nos 60976059 and 61106074;the National Basic Research Program of China under Grant No 2011CB301704; The capacitance-voltage characteristics of AIGaN/GaN high-electron-mobility transistors （HEMTS） are measured in the temperature range of 223-398K. The dependence of capacitance on frequency at various temperatures i...; 关键词：GAN Analysis of Capacitance-Voltage-Temperature Characteristics of GaN High-Electron-Mobility Transistors

Localized deep levels in Al_xGa_(1-x)N epitaxial films with various Al compositions被引量：1: 《Chinese Physics B》2014年第11期422-426,共5页时俪洋沈波闫建昌王军喜王平; supported by the National Basic Research Program of China(Grant No.2012CB619300);the National Natural Science Foundation of China(Grant Nos.11174008 and 61361166007); By using high-temperature deep-level transient spectroscopy （HT-DLTS） and other electrical measurement techniques, localized deep levels in n-type AlxGal xN epitaxial films with various A1 compositions （x = 0, 0.14...; 关键词：localized deep levels CURRENT-VOLTAGE CAPACITANCE-VOLTAGE high-temperature deep-level transientspectroscopy techniques

Point defect determination by photoluminescence and capacitance-voltage characterization in a GaN terahertz Gunn diode被引量：1: 《Chinese Physics B》2013年第8期563-567,共5页李亮杨林安周小伟张进成郝跃; supported by the National Natural Science Foundation of China(Grant Nos.61076079 and 61274092);the Doctoral Program Fund of the Ministry of Education of China(Grant No.20090203110012);the Major Program and State Key Program of the National Natural Science Foundation of China(GrantNo.60890191); Photoluminescence （PL） measurement is used to study the point defect distribution in a GaN terahertz Gunn diode, which is able to the degrade high-field transport characteristic during further device operation. PL, ...; 关键词：GaN terahertz Gunn diode point defect PHOTOLUMINESCENCE CAPACITANCE-VOLTAGE

The Charge Storage of Doubly Stacked Nanocrystalline-Si based Metal Insulator Semiconductor Memory Structure: 《Modeling and Numerical Simulation of Material Science》2013年第1期20-22,共3页Xiang Wang Chao Song Yanqing Guo Jie Song Rui Huang; Doubly stacked nanocrystalline-Si (nc-Si) based metal insulator semiconductor memory structure was fabricated by plasma enhanced chemical vapor deposition. Capacitance-Voltage (C-V) and capacitance-time (C-t) measurem...; 关键词：NC-SI DOTS CAPACITANCE-VOLTAGE Measurement Storage

Measurement Process of MOSFET Device Parameters with VEE Pro Software for DP4T RF Switch: 《International Journal of Communications, Network and System Sciences》2011年第9期590-600,共11页Viranjay M. Srivastava K. S. Yadav G. Singh; To design a Double-Pole Four-Throw (DP4T) RF switch, measurement of device parameters is required. In this DP4T RF switch CMOS is a unit cell, so with a thin oxide layer of thickness 628 ? which is measured optically....; 关键词：Capacitance-Frequency CURVE CAPACITANCE-VOLTAGE CURVE DP4T SWITCH LCR Meter MOS Device Radio FREQUENCY RF SWITCH Testing VEE PRO VLSI

CAPACITANCE-VOLTAGE