云南高校图书馆联盟文献共享服务平台- METAL-INSULATOR-SEMICONDUCTOR

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Recent Advancements in Photoelectrochemical Water Splitting for Hydrogen Production被引量：3: 《Electrochemical Energy Reviews》2023年第1期357-402,共46页Yibo Zhao Zhenjie Niu Jiwu Zhao Lan Xue Xianzhi Fu Jinlin Long; supported by the National Key R&D Program of China(2018YFE0208500);the National Natural Science Foundation of China(Grant Nos.22072022,21773031,22011530144).; Sunlight is the most abundant and inexhaustible energy source on earth.However,its low energy density,dispersibility and intermittent nature make its direct utilization with industrial relevance challenging,suggesting...; 关键词：Photoelectrochemical(PEC)cells Solar water splitting PHOTOCATHODES Semiconductors Metal-insulator-semiconductor(MIS)heterostructure Tandem photoelectrodes

Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator被引量：1: 《Chinese Physics B》2022年第12期526-530,共5页Taofei Pu Shuqiang Liu Xiaobo Li Ting-Ting Wang Jiyao Du Liuan Li Liang He Xinke Liu Jin-Ping Ao; Supported by the National Natural Science Foundation of China(Grant No.61904207);scientific research support foundation for introduced high-level talents of Shenyang Ligong University(Grant No.1010147000914);the Natural Science Foundation of Sichuan Province,China(Grant No.2022NSFSC0886); AlGaN/GaN heterojunction field-effect transistors(HFETs)with p-GaN cap layer are developed for normally-off operation,in which an in-situ grown AlN layer is utilized as the gate insulator.Compared with the SiNxgate in...; 关键词：AlGaN/GaN HFET NORMALLY-OFF in-situ AlN METAL-INSULATOR-SEMICONDUCTOR

Metal-insulator-semiconductor(MIS)photoelectrodes:distance improves performance: 《National Science Review》2021年第8期2-3,共2页Joshua Jack Zhiyong Jason Ren; Hydrogen(H2)is a clean energy carrier with enormous potential to support deep decarbonization towards net-zero and a circular carbon economy.However,H2 production itself can be carbon and energy intensive,as 96%of glo...; 关键词：REFORMING PERFORMANCE circular

C-V characteristics of piezotronic metal-insulator-semiconductor transistor被引量：3: 《Science Bulletin》2020年第2期161-168,88,共9页Jiayang Zheng Yongli Zhou Yaming Zhang Lijie Li Yan Zhang; the support from Swansea University,Solar Photovoltaic Academic Research Consortium(SPARC)Ⅱproject;University of Electronic Science and Technology of China.; Third generation semiconductors for piezotronics and piezo-phototronics,such as Zn O and Ga N,have both piezoelectric and semiconducting properties.Piezotronic devices normally exhibit high strain sensitivity because ...; 关键词：Piezotronic effect Capacitance-voltage(C-V)characteristics METAL-INSULATOR-SEMICONDUCTOR Distribution WIDTH of strain-induced piezoelectric CHARGES

Robust Performance of AlGaN-Channel Metal-Insulator-Semiconductor High-Electron-Mobility Transistors at High Temperatures: 《Chinese Physics Letters》2017年第12期75-78,共4页张力张金风张苇杭张涛徐雷张进成郝跃; Supported by the 111 Project(B12026); Superior characteristics of Al Ga N-channel metal-insulator-semiconductor（MIS） high electron mobility transistors（HEMTs） at high temperatures are demonstrated in detail. The temperature coefficient of the maximum ...; 关键词：Robust Performance of AlGaN-Channel Metal-Insulator-Semiconductor High-Electron-Mobility Transistors at High Temperatures GAN AL

The Influence of Different Type Irradiations on the Surface States Parameters of Si-SiO<sub>2</sub>Structures: 《Journal of Modern Physics》2015年第11期1657-1662,共6页Aram A. Sahakyan Hrant N. Yeritsyan Vachagan V. Harutunyan Hamlet S. Karayan Vahan A. Sahakyan; The results of experimental research of some effects in metal-insulator-semiconductor (MIS) structures induced by different types of radiation (50 MeV electrons, 12 keV gamma-quanta, 10 and 40 keV arsenic ions) are pr...; 关键词：METAL-INSULATOR-SEMICONDUCTOR (MIS) STRUCTURES Radiation Effects Surface STATES (SS) Density Insulator-Semiconductor (I-S) Interface Annealing

Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al_2O_3 as gate insulator被引量：2: 《Journal of Semiconductors》2015年第9期62-65,共4页王哲力周建军孔月婵孔岑董逊杨洋陈堂胜; Project supported by the National Natural Science Foundation of China(Nos.61474101,61106130);the Natural Science Foundation of Jiangsu Province of China(No.BK20131072); A high-performance enhancement-mode （E-mode） gallium nitride （GaN）-based metal-insulator- semiconductor high electron mobility transistor （MIS-HEMT） that employs a 5-nm-thick aluminum gallium nitride （Al0.3Ga0...; 关键词：enhancement-mode （E-mode） AIGAN/GAN metal-insulator-semiconductor high electron mobilitytransistor （MIS-HEMT） atomic layer deposition （ALD） AL2O3

Enhanced Performance in Perovskite Organic Lead Iodide Heterojunction Solar Cells with Metal-Insulator-Semiconductor Back Contact被引量：7: 《Chinese Physics Letters》2013年第12期179-182,共4页SHI Jiang-Jian DONG Wan XU Yu-Zhuan LI Chun-Hui LV Song-Tao ZHU Li-Feng DONG Juan LUO Yan-Hong LI Dong-Mei MENG Qing-Bo CHEN Qiang; Supported by the National Natural Science Foundation of China under Grant Nos 21173260,51072221 and 91233202;the National Basic Research Program of China under Grant Nos 2012CB932903 and 2012CB932904;the Knowledge Innovation Program of the Chinese Academy of Sciences.; Metal-insulator-semiconductor back contact has been employed for a perovskite organic lead iodide heterojunction solar cell,in which an ultrathin Al_(2)O_(3) film as an insulating layer was deposited onto the CH_(3)NH...; 关键词：ABSORBER PEROVSKITE IMPEDANCE

Interface States in AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors: 《Chinese Physics Letters》2013年第12期130-133,共4页FENG Qian DU Kai LI Yu-Kun SHI Peng FENG Qing; Frequency-dependent capacitance and conductance measurements are performed on AlGaN/GaN high electron mobility transistors(HEMTs)and NbAlO/AlGaN/GaN metal-insulator-semiconductor HEMTs(MISHEMTs)to extract density and ...; 关键词：ALGAN/GAN ALGAN HEMTS

Temperature-dependent dielectric properties of Au/Si_3N_4/n-Si (metal insulator semiconductor) structures: 《Chinese Physics B》2013年第11期541-546,共6页T.Ataseven A.Tataroglu; Projected supported by Gazi University Scientific Research Project(BAP),FEF.05/2012-15; The dielectric properties of Au/Si3N4/n-Si （MIS） structures are studied using the admittance measurements （C–V and G/ω–V） each as a function of temperature in a range from 80 K to 400 K for two frequencies （10...; 关键词：Au/Si3N4/n-Si （metal-insulator-semiconductor） structure admittance measurements dielectricproperties ac conductivity

METAL-INSULATOR-SEMICONDUCTOR