The Influence of Different Type Irradiations on the Surface States Parameters of Si-SiO₂Structures  

作　　者：Aram A. Sahakyan Hrant N. Yeritsyan Vachagan V. Harutunyan Hamlet S. Karayan Vahan A. Sahakyan 

机构地区：[1]A. I. Alikhanyan National Science Laboratory, Yerevan Physics Institute, Yerevan, Armenia [2]Yerevan State University, Yerevan, Armenia [3]National Institute of Metrology, Yerevan, Armenia

出　　处：《Journal of Modern Physics》2015年第11期1657-1662,共6页现代物理（英文）

摘　　要：The results of experimental research of some effects in metal-insulator-semiconductor (MIS) structures induced by different types of radiation (50 MeV electrons, 12 keV gamma-quanta, 10 and 40 keV arsenic ions) are presented. It is found that there is a significant difference between the characters of radiation surface states (SS) formed by ionization and impact actions of the MIS structure irradiation at the insulator-semiconductor (I-S) interface. It is shown that the SS generation rate is increased in electric fields and depends on the MIS structure field electrode material.The results of experimental research of some effects in metal-insulator-semiconductor (MIS) structures induced by different types of radiation (50 MeV electrons, 12 keV gamma-quanta, 10 and 40 keV arsenic ions) are presented. It is found that there is a significant difference between the characters of radiation surface states (SS) formed by ionization and impact actions of the MIS structure irradiation at the insulator-semiconductor (I-S) interface. It is shown that the SS generation rate is increased in electric fields and depends on the MIS structure field electrode material.

关 键 词：METAL-INSULATOR-SEMICONDUCTOR (MIS) STRUCTURES Radiation Effects Surface STATES (SS) Density Insulator-Semiconductor (I-S) Interface Annealing 

分 类 号：R73[医药卫生—肿瘤]