Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator  

作　　者：Taofei Pu Shuqiang Liu Xiaobo Li Ting-Ting Wang Jiyao Du Liuan Li Liang He Xinke Liu Jin-Ping Ao 蒲涛飞;刘树强;李小波;王婷婷;都继瑶;李柳暗;何亮;刘新科;敖金平(Hanshan Normal University,Chaozhou 521041,China;No.5 Electronics Research Institute of the Ministry of Industry and Information Technology,Guangzhou 510610,China;Shenzhen University,Shenzhen 518000,China;School of Microelectronics,Xidian University,Xi’an 710071,China;School of Automation and Electrical Engineering,Shenyang Ligong University,Shenyang 110159,China;Yibin Research Institute,Jilin University,Yibin 644000,China)

机构地区：[1]Hanshan Normal University,Chaozhou 521041,China [2]No.5 Electronics Research Institute of the Ministry of Industry and Information Technology,Guangzhou 510610,China [3]Shenzhen University,Shenzhen 518000,China [4]School of Microelectronics,Xidian University,Xi’an 710071,China [5]School of Automation and Electrical Engineering,Shenyang Ligong University,Shenyang 110159,China [6]Yibin Research Institute,Jilin University,Yibin 644000,China

出　　处：《Chinese Physics B》2022年第12期526-530,共5页中国物理B（英文版）

基　　金：Supported by the National Natural Science Foundation of China(Grant No.61904207);scientific research support foundation for introduced high-level talents of Shenyang Ligong University(Grant No.1010147000914);the Natural Science Foundation of Sichuan Province,China(Grant No.2022NSFSC0886)

摘　　要：AlGaN/GaN heterojunction field-effect transistors(HFETs)with p-GaN cap layer are developed for normally-off operation,in which an in-situ grown AlN layer is utilized as the gate insulator.Compared with the SiNxgate insulator,the AlN/p-GaN interface presents a more obvious energy band bending and a wider depletion region,which helps to positively shift the threshold voltage.In addition,the relatively large conduction band offset of AlN/p-GaN is beneficial to suppress the gate leakage current and enhance the gate breakdown voltage.Owing to the introduction of AlN layer,normally-off p-GaN capped AlGaN/GaN HFET with a threshold voltage of 4 V and a gate swing of 13 V is realized.Furthermore,the field-effect mobility is approximately 1500 cm^(2)·V^(-1)·s^(-1)in the 2DEG channel,implying a good device performance.

关 键 词：AlGaN/GaN HFET NORMALLY-OFF in-situ AlN METAL-INSULATOR-SEMICONDUCTOR 

分 类 号：TN386[电子电信—物理电子学]