NORMALLY-OFF

作品数：16被引量：11H指数：2
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Demonstration of normally-off p-channel GaN transistor with high threshold voltage and low subthreshold swing based on single p-GaN被引量：1
《Science China(Information Sciences)》2024年第9期344-345,共2页Yangfeng LI Zian DONG Shuai CHEN Qin WANG Tong LI Shulin CHEN Kun ZHENG Jie ZHANG Guojian DING Yang WANG Haiqiang JIA Rong YANG Lei LIAO 
supported by Hunan Provincial Natural Science Foundation of China(Grant No.2024JJ6157);Natural Science Foundation of Changsha(Grant No.kq2208213);National Natural Science Foundation of China(Grant No.62122084);Education Department of Hunan Province(Grant No.22B0020);Synergetic Extreme Condition User Facility(Grant No.2024-SECUF-PT-001871);Fundamental Research Funds for the Central Universities(Grant No.531118010804)。
GaN outperforms silicon in applications with high power and high frequency owing to the high critical electric field and high electron mobility.However,the hole-based GaN transistors which are pivotal to the GaN-based...
关键词：channel GAN TRANSISTOR 
Design and research of normally-offβ-Ga_(2)O_(3)/4H-SiC heterojunction field effect transistor
《Chinese Physics B》2023年第3期461-466,共6页程梅霞 栾苏珍 王海林 贾仁需 
the National Natural Science Foundation of China(Grant Nos.61974119 and 61834005).
Ga_(2)O_(3)is difficult to achieve p-type doping,which further hinders the development of Ga_(2)O_(3)-based power devices and is not conducive to the development of new devices with high power density and low power co...
关键词：MOSFET HETEROJUNCTION threshold voltage 
1.7 kV normally-off p-GaN gate high-electron-mobility transistors on a semi-insulating SiC substrate被引量：1
《Science China(Information Sciences)》2023年第2期246-251,共6页Shenglei ZHAO Jincheng ZHANG Yachao ZHANG Lansheng FENG Shuang LIU Xiufeng SONG Yixin YAO Jun LUO Zhihong LIU Shengrui XU Yue HAO 
supported in part by National Science Fund for Distinguished Young Scholars(Grant No.61925404);National Natural Science Foundation of China(Grant No.62074122);Fundamental Research Plan(Grant No.JCKY2020110B010);Major Projects of Shanxi Province(Grant No.20201102012)。
A study of 1.7 kV normally-off p-GaN gate high-electron-mobility transistors(HEMTs)on SiC substrates is presented.The fabricated p-GaN HEMT with a gate-drain spacing LGD=5μm exhibited a threshold voltage of 1.10 V,a ...
关键词：p-GaN gate HEMTS high voltage SiC substrate 
Normally-off AlGaN/GaN heterojunction field-effect transistors with in-situ AlN gate insulator被引量：1
《Chinese Physics B》2022年第12期526-530,共5页Taofei Pu Shuqiang Liu Xiaobo Li Ting-Ting Wang Jiyao Du Liuan Li Liang He Xinke Liu Jin-Ping Ao 
Supported by the National Natural Science Foundation of China(Grant No.61904207);scientific research support foundation for introduced high-level talents of Shenyang Ligong University(Grant No.1010147000914);the Natural Science Foundation of Sichuan Province,China(Grant No.2022NSFSC0886)
AlGaN/GaN heterojunction field-effect transistors(HFETs)with p-GaN cap layer are developed for normally-off operation,in which an in-situ grown AlN layer is utilized as the gate insulator.Compared with the SiNxgate in...
关键词：AlGaN/GaN HFET NORMALLY-OFF in-situ AlN METAL-INSULATOR-SEMICONDUCTOR 
Physical analysis of normally-off ALD Al_(2)O_(3)/GaN MOSFET with different substrates using self-terminating thermal oxidation-assisted wet etching technique
《Chinese Physics B》2022年第9期511-518,共8页Cheng-Yu Huang Jin-Yan Wang Bin Zhang Zhen Fu Fang Liu Mao-Jun Wang Meng-Jun Li Xin Wang Chen Wang Jia-Yin He Yan-Dong He 
Project supported by the Research on Key Techniques in Reliability of Low Power Sensor Chip for IOTIPS and the Technology Project of Headquarters,State Grid Corporation of China(Grant No.5700-202041397A-0-0-00).
Based on the self-terminating thermal oxidation-assisted wet etching technique,two kinds of enhancement mode Al_(2)O_(3)/GaN MOSFETs(metal-oxide-semiconductor field-effect transistors)separately with sapphire substrat...
关键词：atomic layer deposition Al_(2)O_(3)/GaN MOSFET NORMALLY-OFF interface/border traps thermal oxidation-assisted wet etching 
Investigation of heavy ion irradiation effects on 650-V p-GaN normally-off HEMTs被引量：1
《Science China(Information Sciences)》2022年第8期250-256,共7页Yinhe WU Jincheng ZHANG Shenglei ZHAO Zhaoxi WU Zhongxu WANG Bo MEI Chao DUAN Dujun ZHAO Weihang ZHANG Zhihong LIU Yue HAO 
supported by the National Natural Science Foundation of China(Grant No.62074122);Key-Area Research and Development Program of Guangdong Province(Grant No.2020B010174001);National Key Science and Technology Special Project(Grant No.2019ZX01001101-010)。
In this study,we investigate heavy ion irradiation effects on commercial 650 V p-GaN normallyoff HEMTs.Ge and Cl ions are used to irradiate the GaN devices in the experiments.Ge and Cl ion beam irradiation have little...
关键词：heavy ions irradiation p-GaN normally-off HEMTs line-shaped crystal defects leakage path defect percolation process 
Simulation design of normally-off AlGaN/GaN high-electron-mobility transistors with p-GaN Schottky hybrid gate
《Chinese Physics B》2022年第6期712-716,共5页Yun-Long He Fang Zhang Kai Liu Yue-Hua Hong Xue-Feng Zheng Chong Wang Xiao-Hua Ma Yue Hao 
supported by the National Natural Science Foundation of China(Grant No.62004150);Postdoctoral Science Foundation of China(Grant No.2018M643575);the Fundamental Research Funds for the Central Universities,and the Innovation Fund of Xidian University(Grant No.JB211104)。
A novel normally-off AlGaN/GaN high-electron-mobility transistor(HEMT)with a p-GaN Schottky hybrid gate(PSHG)is proposed,and compared with the conventional p-GaN normally-off AlGaN/GaN HEMTs.This structure can be real...
关键词：normally-off high-electron-mobility transistor ALGAN/GAN P-GAN 
Analysis and Characterization of Normally-Off Gallium Nitride High Electron Mobility Transistors
《Computers, Materials & Continua》2021年第10期1021-1037,共17页Shahzaib Anwar Sardar Muhammad Gulfam Bilal Muhammad Syed Junaid Nawaz Khursheed Aurangzeb Mohammad Kaleem 
High electron mobility transistor(HEMT)based on gallium nitride(GaN)is one of the most promising candidates for the future generation of high frequencies and high-power electronic applications.This research work aims ...
关键词：High electron mobility GAN HEMT bipolar transistors gallium nitride HETEROJUNCTIONS MOS devices 
Analysis on degradation mechanisms of normally-off p-GaN gate AlGaN/GaN high-electron mobility transistor
《Chinese Physics B》2021年第4期448-452,共5页Si-De Song Su-Zhen Wu Guo-Zhu Liu Wei Zhao Yin-Quan Wang Jian-Wei Wu Qi He 
Project supported by the Equipment Developing Advanced Research Program of China(Grant No.6140A24030107)。
The degradation mechanisms of enhancement-mode p-GaN gate AlGaN/GaN high-electron mobility transistor was analyzed extensively,by means of drain voltage stress and gate bias stress.The results indicate that:(ⅰ) High ...
关键词：high-electron-mobility transistors(HEMTs) stress degradation threshold voltage 
Interface and border trapping effects in normally-off Al2O3/AlGaN/GaN MOS-HEMTs with different post-etch surface treatments被引量：1
《Chinese Physics B》2020年第10期459-463,共5页Si-Qi Jing Xiao-Hua Ma Jie-Jie Zhu Xin-Chuang Zhang Si-Yu Liu Qing Zhu Yue Hao 
Project supported by the National Natural Science Foundation of China (Grant Nos. 61704124, 11690042, and 61634005).
Trapping effect in normally-off Al2O3/AlGaN/GaN metal–oxide–semiconductor (MOS) high-electron-mobility transistors (MOS-HEMTs) with post-etch surface treatment was studied in this paper. Diffusion-controlled interfa...
关键词：AlGaN/GaN MOS-HEMTs interface traps border traps photo-assisted C-V measurement 
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