Simulation design of normally-off AlGaN/GaN high-electron-mobility transistors with p-GaN Schottky hybrid gate  

作　　者：Yun-Long He Fang Zhang Kai Liu Yue-Hua Hong Xue-Feng Zheng Chong Wang Xiao-Hua Ma Yue Hao 何云龙;张方;刘凯;洪悦华;郑雪峰;王冲;马晓华;郝跃(Key Laboratory of Wide Band Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China)

机构地区：[1]Key Laboratory of Wide Band Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi’an 710071,China

出　　处：《Chinese Physics B》2022年第6期712-716,共5页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant No.62004150);Postdoctoral Science Foundation of China(Grant No.2018M643575);the Fundamental Research Funds for the Central Universities,and the Innovation Fund of Xidian University(Grant No.JB211104)。

摘　　要：A novel normally-off AlGaN/GaN high-electron-mobility transistor(HEMT)with a p-GaN Schottky hybrid gate(PSHG)is proposed,and compared with the conventional p-GaN normally-off AlGaN/GaN HEMTs.This structure can be realized by selective etching of p-GaN layer,which enables the Schottky junction and PN junction to control the channel charge at the same time.The direct current(DC)and switching characteristics of the PSHG HEMTs are simulated by Slivaco TCAD,and the p-GaN HEMTs and conventional normally-on HEMTs are also simulated for comparison.The simulation results show that the PSHG HEMTs have a higher current density and a lower on-resistance than p-GaN HEMTs,which is more obvious with the decrease of p-GaN ratios of the PSHG HEMTs.The breakdown voltage and threshold voltage of the PSHG HEMTs are very close to those of the p-GaN HEMTs.In addition,the PSHG HEMTs have a higher switching speed than the conventional normally-on HEMTs,and the p-GaN layer ratio has no obvious effect on the switching speed.

关 键 词：normally-off high-electron-mobility transistor ALGAN/GAN P-GAN 

分 类 号：TN386[电子电信—物理电子学]