Design and research of normally-offβ-Ga_(2)O_(3)/4H-SiC heterojunction field effect transistor  

作　　者：程梅霞 栾苏珍 王海林 贾仁需 Meixia Cheng;Suzhen Luan;Hailin Wang;Renxu Jia(The Key Laboratory of Heterogeneous Network Convergence Communication,Xi'an University of Science and Technology,Xi'an 710600,China;The Key Laboratory of Wide Band Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China)

机构地区：[1]The Key Laboratory of Heterogeneous Network Convergence Communication,Xi'an University of Science and Technology,Xi'an 710600,China [2]The Key Laboratory of Wide Band Gap Semiconductor Materials and Devices,School of Microelectronics,Xidian University,Xi'an 710071,China

出　　处：《Chinese Physics B》2023年第3期461-466,共6页中国物理B（英文版）

基　　金：the National Natural Science Foundation of China(Grant Nos.61974119 and 61834005).

摘　　要：Ga_(2)O_(3)is difficult to achieve p-type doping,which further hinders the development of Ga_(2)O_(3)-based power devices and is not conducive to the development of new devices with high power density and low power consumption.This paper expounds aβ-Ga_(2)O_(3)/4H-SiC heterojunction lateral metal–oxide–semiconductor field-effect transistor(HJFET),which can make better use of the characteristics of PN junction by adding p-doped SiC in the channel region.Compared with the conventional devices,the threshold voltage of the heterojunction metal–oxide–semiconductor field-effect transistor(MOSFET)is greatly improved,and normally-off operation is realized,showing a positive threshold voltage of 0.82 V.Meanwhile,the off-state breakdown voltage of the device is up to 1817 V,and the maximum transconductance is 15.3 mS/mm.The optimal PFOM is obtained by simulating the thickness,length and doping of the SiC in each region of the epitaxial layer.This structure provides a feasible idea for high performanceβ-Ga_(2)O_(3)MOSFET.

关 键 词：MOSFET HETEROJUNCTION threshold voltage 

分 类 号：TN386[电子电信—物理电子学]