Analysis and Characterization of Normally-Off Gallium Nitride High Electron Mobility Transistors  

作　　者：Shahzaib Anwar Sardar Muhammad Gulfam Bilal Muhammad Syed Junaid Nawaz Khursheed Aurangzeb Mohammad Kaleem 

机构地区：[1]Department of Electrical and Computer Engineering,COMSATS University Islamabad(CUI),Islamabad,45550,Pakistan [2]CTIF Global Capsule,Department of Business Development and Technology,Aarhus University,7400,Herning,Denmark [3]Computer Engineering Department,College of Computer and Information Sciences,King Saud University,Riyadh,11543,Saudi Arabia

出　　处：《Computers, Materials & Continua》2021年第10期1021-1037,共17页计算机、材料和连续体（英文）

摘　　要：High electron mobility transistor(HEMT)based on gallium nitride(GaN)is one of the most promising candidates for the future generation of high frequencies and high-power electronic applications.This research work aims at designing and characterization of enhancement-mode or normally-off GaN HEMT.The impact of variations in gate length,mole concentration,barrier variations and other important design parameters on the performance of normally-off GaN HEMT is thoroughly investigated.An increase in the gate length causes a decrease in the drain current and transconductance,while an increase in drain current and transconductance can be achieved by increasing the concentration of aluminium(Al).For Al mole fractions of 23%,25%,and 27%,within Al gallium nitride(AlGaN)barrier,the GaN HEMT devices provide a maximum drain current of 347,408 and 474 mA/μm and a transconductance of 19,20.2,21.5 mS/μm,respectively.Whereas,for Al mole fraction of 10%and 15%,within AlGaN buffer,these devices are observed to provide a drain current of 329 and 283 mA/μm,respectively.Furthermore,for a gate length of 2.4,3.4,and 4.4μm,the device is observed to exhibit a maximum drain current of 272,235,and 221 mA/μm and the transconductance of 16.2,14,and 12.3 mS/μm,respectively.It is established that a maximum drain current of 997 mA/μm can be achieved with an Al concentration of 23%,and the device exhibits a steady drain current with enhanced transconductance.These observations demonstrate tremendous potential for two-dimensional electron gas(2DEG)for securing of the normally-off mode operation.A suitable setting of gate length and other design parameters is critical in preserving the normally-off mode operation while also enhancing the critical performance parameters at the same time.Due to the normallyon depletion-mode nature of GaN HEMT,it is usually not considered as suitable for high power levels,frequencies,and temperature.In such settings,a negative bias is required to enter the blocking condition;however,in the before-mentioned normal

关 键 词：High electron mobility GAN HEMT bipolar transistors gallium nitride HETEROJUNCTIONS MOS devices 

分 类 号：TN3[电子电信—物理电子学]