Robust Performance of AlGaN-Channel Metal-Insulator-Semiconductor High-Electron-Mobility Transistors at High Temperatures  

作　　者：张力 张金风 张苇杭 张涛 徐雷 张进成 郝跃 

机构地区：[1]Key Lab of Wide Band-Gap Semiconductor Technology,School of Microelectronics,Xidian University,Xi'an 710071

出　　处：《Chinese Physics Letters》2017年第12期75-78,共4页中国物理快报（英文版）

基　　金：Supported by the 111 Project(B12026)

摘　　要：Superior characteristics of Al Ga N-channel metal-insulator-semiconductor（MIS） high electron mobility transistors（HEMTs） at high temperatures are demonstrated in detail. The temperature coefficient of the maximum saturation drain current for the Al GaN-channel MIS HEMT can be reduced by 50% compared with the Ga N-channel HEMT. Moreover, benefiting from the better suppression of gate current and reduced leakage current in the buffer layer, the Al Ga N-channel MIS HEMT demonstrates an average breakdown electric field of 1.83 MV/cm at25℃ and 1.06 MV/cm at 300℃, which is almost 2 times and 3 times respectively larger than that of the reference Ga N-channel HEMT. Pulsed mode analyses suggest that the proposed device suffers from smaller current collapse when the temperature reaches as high as 300℃.Superior characteristics of Al Ga N-channel metal-insulator-semiconductor（MIS） high electron mobility transistors（HEMTs） at high temperatures are demonstrated in detail. The temperature coefficient of the maximum saturation drain current for the Al GaN-channel MIS HEMT can be reduced by 50% compared with the Ga N-channel HEMT. Moreover, benefiting from the better suppression of gate current and reduced leakage current in the buffer layer, the Al Ga N-channel MIS HEMT demonstrates an average breakdown electric field of 1.83 MV/cm at25℃ and 1.06 MV/cm at 300℃, which is almost 2 times and 3 times respectively larger than that of the reference Ga N-channel HEMT. Pulsed mode analyses suggest that the proposed device suffers from smaller current collapse when the temperature reaches as high as 300℃.

关 键 词：Robust Performance of AlGaN-Channel Metal-Insulator-Semiconductor High-Electron-Mobility Transistors at High Temperatures GAN AL 

分 类 号：TN386[电子电信—物理电子学]