Interface States in AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors  

作　　者：FENG Qian DU Kai LI Yu-Kun SHI Peng FENG Qing 冯倩;杜锴;李宇坤;时鹏;冯庆(School of Microelectronics,Xidian University,Xi'an 710071;Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi'an 710071)

机构地区：[1]School of Microelectronics,Xidian University,Xi'an 710071 [2]Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,Xidian University,Xi'an 710071

出　　处：《Chinese Physics Letters》2013年第12期130-133,共4页中国物理快报（英文版）

摘　　要：Frequency-dependent capacitance and conductance measurements are performed on AlGaN/GaN high electron mobility transistors(HEMTs)and NbAlO/AlGaN/GaN metal-insulator-semiconductor HEMTs(MISHEMTs)to extract density and time constants of the trap states at NbAlO/AlGaN interface and gate/AlGaN interface with the gate-voltage biased into the accumulation region and that at the AlGaN/GaN interface with the gate-voltage biased into the depletion region in different circuit models.The measurement results indicate that the trap density at NbAlO/AlGaN interface is about one order lower than that at gate/AlGaN interface while the trap density at AlGaN/GaN interface is in the same order,so the NbAlO film can passivate the AlGaN surface effectively,which is consistent with the current collapse results.

关 键 词：ALGAN/GAN ALGAN HEMTS 

分 类 号：TN3[电子电信—物理电子学]