Analysis of Capacitance-Voltage-Temperature Characteristics of GaN High-Electron-Mobility Transistors  

作　　者：赵妙 刘新宇 

机构地区：[1]Laboratory of Microwave Device and Integrated Circuits,Institute of Microelectronics,Chinese Academy of Sciences

出　　处：《Chinese Physics Letters》2015年第4期148-150,共3页中国物理快报（英文版）

基　　金：Supported by the National Natural Science Foundation of China under Grant Nos 60976059 and 61106074;the National Basic Research Program of China under Grant No 2011CB301704

摘　　要：The capacitance-voltage characteristics of AIGaN/GaN high-electron-mobility transistors （HEMTS） are measured in the temperature range of 223-398K. The dependence of capacitance on frequency at various temperatures is analyzed. At lower temperatures, the capacitance decreases only very slightly with frequency. At higher frequencies the curves for all temperatures tend to one capacitance value. Such behavior can be attributed to the interface states or the dislocations.The capacitance-voltage characteristics of AIGaN/GaN high-electron-mobility transistors （HEMTS） are measured in the temperature range of 223-398K. The dependence of capacitance on frequency at various temperatures is analyzed. At lower temperatures, the capacitance decreases only very slightly with frequency. At higher frequencies the curves for all temperatures tend to one capacitance value. Such behavior can be attributed to the interface states or the dislocations.

关 键 词：GAN Analysis of Capacitance-Voltage-Temperature Characteristics of GaN High-Electron-Mobility Transistors 

分 类 号：TN386[电子电信—物理电子学]