单片芯片背面金属化工艺研究  

Research on Single Chip Backside Metallization Process

作　　者：赵兹君[1] 李林森[1] 汪涛[1] 李佳[1] 

机构地区：[1]中国电子科技集团公司43研究所,合肥230088

出　　处：《混合微电子技术》2013年第1期59-63,共5页Hybrid Microelectronics Technology

摘　　要：本文对单片芯片背面金属化工艺进行了研究，为小尺寸芯片背面金属化提供了一条有效的途径。针对单片芯片体积小、易碎的特点，设计了专用的模具对芯片进行成膜装夹，并采用软掩模的方式避免了芯片背面成膜过程中芯片侧面和正面的金属化污染。通过实验和分析，确定了芯片背面金属化膜系结构（Ti—Ni—Au）及厚度，并对制作样品进行了剪切力、热稳定性和焊接性能评价。实验结果表明：该工艺制备的单片芯片背面金属化产品符合要求，性能稳定可靠。A special research on single chip backside metallization process is presented in this paper,which provides an effective method to achieve the backside metallization. According to the features of small size and fragile, a dedicated masking mold clamp is designed specially for the single chip and soft mask is utilized to avoid the front and lateral face of the chip from contami- nated during film forming technology. Through a series of experiments and analysis, the optimized metallization layer structure （ Ti -Ni -Au） and thickness of the single chip are determinated. The welding performance, shear strength test, and thermal fatigue tests of sample are evaluated. The test results show that the process meet the requirements of single chip backside metallization and it has reliable performance.

关 键 词：单片芯片 背面金属化 软掩模 Ti—Ni—Au 

分 类 号：TN405[电子电信—微电子学与固体电子学]