Bi(Ga_xFe_(1-x))O_3-PbTiO_3高温压电陶瓷的结构和介电性能  

Structure and Dielectric Properties of Ga-modified Bi(Ga_xFe_(1-x))O_3-PbTiO_3 High Temperature Piezoelectric Ceramics

作　　者：冯磊洋[1] 王大磊[1] 石贵阳[1] 金灯仁[1] 程晋荣[1] 

机构地区：[1]上海大学材料科学与工程学院电子信息材料系,上海200072

出　　处：《压电与声光》2013年第4期588-591,共4页Piezoelectrics & Acoustooptics

基　　金：国家自然科学基金资助项目(50872080)

摘　　要：采用传统固相反应法制备了0.4Bi(GaxFe1-x)O3-0.6PbTiO3(BGF-PT)(x=0.05,0.25,0.40,质量分数)陶瓷。BGF-PT呈四方相钙钛矿结构,四方畸变度c/a比约为1.09。当x(Ga)=25%时,BGF-PT陶瓷的晶粒分布均匀,Fe元素在局部区域无明显富集,该组分陶瓷在室温下具有最优的介电性能,居里温度为572℃。BGF-PT陶瓷在较低温度和高温下的载流子分别为电子和氧空位。Ga元素的引入抑制了电子电导和氧空位离子电导,降低了BGF-PT陶瓷的交流电导率。0.4Bi（GaxFe1-x）O3-0.6PbTiO3（BGF-PT）（x=0.05,0.25 and 0.40） ceramics have been fabricated by conventional solid-state reactions.The prepared BGF-PT ceramics possessed a pure phase of perovskite structure,and the crystalline symmetry was the tetragonal.The c/a ratio of BGF-PT ceramics was about 1.09.The grain size of BGF-PT was uniform when the content of Ga was 25%,and no segregation of Fe element was found.BGF-PT ceramics with 25% Ga doping had the best dielectric properties at room temperature with Curie temperature TC of 572 ℃.The main charge carriers were electrons and oxygen ion vacancies respectively in the low and high temperature range.The introduction of Ga element blocked the hopping of electrons and restrained oxygen vacancies conduction,which decreased the AC conductivity of BGF-PT ceramics effectively.

关 键 词：0 4Bi(GaxFe1-x)O3-0 6PbTiO3(BGF-PT)压电陶瓷 EDS面扫描 阻抗谱 交流电导率 

分 类 号：TN384[电子电信—物理电子学]