低k介质多孔SiO_2干凝胶薄膜的温度效应研究  

Study of temperature effect for low-k porous SiO_2 xerogel films

作　　者：边惠[1] 万里[1] 

机构地区：[1]温州大学物理与电子信息工程学院,浙江温州325035

出　　处：《电子元件与材料》2013年第8期26-28,共3页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(No.60807002)

摘　　要：采用正硅酸乙酯(TEOS)作为Si源,利用溶胶–凝胶旋涂法制备了多孔SiO2干凝胶薄膜,测试分析了200,300和400℃退火后样品的不同特性。研究了退火温度对多孔SiO2干凝胶低k薄膜的化学性质、物理性质和电学性能的影响。结果表明在400℃的退火温度下所制备的薄膜具有最佳性能:其厚度和折射率均达到最小值,分别为156 nm和1.31;孔隙度和均方根粗糙度均达到最大值,分别为33%和2.01 mm,并获得最低的相对介电常数(k=2)和最小的泄漏电流。Porous SiO2 xerogel thin films were prepared by sol-gel spin-coating method using tetraethylorthosilicate（TEOS） as a source of Si.Characteristics of different films annealed at 200,300 and 400 ℃ were tested and analyzed.Effects of annealing temperature on chemical,physical and electrical properties of porous SiO2 xerogel low-k films were investigated.The results show that films annealed at 400 ℃ exhibit the best performances： the thickness and refractive index reach the lowest values of 156 nm and 1.31 repectively,the porosity and RMS roughness reach the highest values of 33% and 2.01 mm respectively,meanwhile also the lowest permittivity（k=2） and the lowest leakage current are obtained.

关 键 词：低介电常数 干凝胶 夹层介质 温度效应 多孔薄膜 泄漏电流 

分 类 号：TM277[一般工业技术—材料科学与工程]