^(60)Coγ光子在SiO_2材料中能量沉积的研究  

Study of Energy Deposition of ^(60)Coγ Photons in SiO_2 Materials

作　　者：答元[1] 白岗[1] 

机构地区：[1]西安工业大学理学院,西安710021

出　　处：《西安工业大学学报》2013年第5期359-362,共4页Journal of Xi’an Technological University

摘　　要：针对目前高能光子的电离辐射效应极大的影响半导体材料广泛应用的现状,以MOS器件为研究对象,利用高能光子反应截面数据库,采用蒙特卡罗模拟方法,用C语言编写了模拟程序,对高能光子在MOS器件的SiO2层中的输运过程进行了模拟和计算.计算结果表明,MOS器件的电离损伤与SiO2层的厚度关系很大,减小SiO2层的厚度可以明显地减少SiO2中的能量沉积,使得MOS器件的电离损伤减小.The study is made to solve the problem that the ionizing radiation effect of high-energy photons has a great effect on the application of semiconductor materials.By using high-energy photons cross-section database and the monte carlo simulation code which is written with Cprogramming language,the reaction process of high-energy photons in SiO2layer of the MOS device is simulated.The results show that the ionization damage of the MOS device has direct relationship with the thickness of SiO2layer and the reduction of its thickness can significantly reduce the energy deposition in SiO2,thus reducing the ionization damage to MOS.

关 键 词：电离辐射 光子 蒙特卡洛模拟 金属氧化物半导体 SIO2 

分 类 号：TN304[电子电信—物理电子学] O572.31[理学—粒子物理与原子核物理]