合金条件对Al/n^+-Ge欧姆接触的影响  

Alloy Conditions Impact on Al/n^+-Ge Ohmic Contact

作　　者：林旺[1] 阮育娇[1] 陈松岩[1] 李成[1] 赖虹凯[1] 汤丁亮[2] 

机构地区：[1]厦门大学物理系半导体光子学研究中心,福建厦门361005 [2]厦门大学化学化工学院,福建厦门361005

出　　处：《半导体技术》2013年第7期530-535,共6页Semiconductor Technology

基　　金：国家自然科学基金资助项目(61176050;61036003;61176092;60837001);国家重点基础研究发展计划资助项目(2012CB933503;2013CB632103);福建省基础研究基金资助项目(2012H0038);中央高校基本科研基金资助项目(2010121056)

摘　　要：Ge比Si具有更高的电子和空穴迁移率,且Ge材料可以应用于1.3～1.5μm近红外波段,因此Ge成为制备微电子和光电子器件的主要材料。然而由于Ge的费密能级钉扎效应以及难以获得高浓度的磷(P)原位掺杂,使得n-Ge的欧姆接触成为一个难题。采用P+离子注入获得高掺杂浓度的n-Ge材料,掺杂浓度为1.5×1019cm-3;依据圆形传输线模型(CTLM)制备了一系列Al/n+-Ge样品,研究了不同退火温度和退火方式对其接触特性的影响。实验结果表明,Al/n+-Ge样品通过400℃快速热退火(RTA)30 s表现出欧姆接触特性,并且接触电阻率ρc最低,为1.3×10-5Ω·cm2。Germanium is used as the primary material on the micro-or opto-electronic devices, due to the much higher electron and hole mobility compared to Si, as well as its favorable absorption coefficient in the near infrared wavelength regime （1.3 - 1.5 μm）. However, the ohmic contact formation on n-type Ge is still a challenge because of the severe Fermi level pinning effect of n-Ge and the low concentration of P-situ doping. Heavily-doped n-type Ge was achieved with phosphorus concentration of 1.5 × 1019 cm-3 by the ion implantation. And then a series of A1/n＋-Ge samples were prepared according to circular transmission line model （CTLM）. The samples were annealed at different temperatures and with different annealing ways to analyze the contact characteristics. The test result indicate that the A1/n ＋-Ge contacts show ohmic characteristics by rapid thermal annealing （RTA） at 400 ℃ for 30 s, with the lowest contact resistivity Pc of 1.3 × 10^-5Ω . cm2.

关 键 词：AL n+-Ge接触 离子注入 退火 圆形传输线模型(CTLM) 接触电阻率 

分 类 号：TN305[电子电信—物理电子学]