种子层诱导溶胶-凝胶法Li,Mg掺杂ZnO薄膜的结构及光电性能研究  被引量:4

Structure and Optical and Electrical Properties of Li,Mg Doped ZnO Thin Films Prepared by Seed Induced Sol-Gel Method

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作  者:张利静[1] 方华靖[1] 严清峰[1] 沈光球[1] 王晓青[1] 沈德忠[1] 

机构地区:[1]清华大学化学系,北京100084

出  处:《人工晶体学报》2013年第7期1272-1277,共6页Journal of Synthetic Crystals

基  金:清华大学信息科学与技术国家实验室(筹)学科交叉基金;清华大学自主科研计划资助课题;国家自然科学基金重点项目(51132005)

摘  要:本文以ZnO为种子层采用溶胶-凝胶法制备了Li、Mg掺杂的氧化锌薄膜。利用XRD、SEM、PL等手段对薄膜的结构、表面形貌和发光性能进行了表征,研究了不同掺杂情况、种子层、旋涂次数对Li、Mg掺杂的ZnO薄膜性能的影响。结果表明预铺种子层、旋涂8次、在580℃下退火的条件下制得的薄膜性能最好,通过Li、Mg共掺杂使得ZnO薄膜的光致发光性能增强近5倍,近带边发射峰发生蓝移,禁带宽度变大。ZnO thin film and Li, Mg doped ZnO thin films were deposited on silicon substrates by sol-gel method using ZnO as seed layer. The structural, morphological and optical properties of ZnO thin films were characterized by X-ray diffractometer, field emission scanning electron microscopy and room- temperature photoluminescence. The effects of Li and Mg dopants, seed layer and spin coating times on the performance of the ZnO thin films were investigated. Optimal process conditions were obtained to prepare ZnO films. The photoluminescence properties of Li-Mg co-doped ZnO enhanced nearly five times, the NBE shifted to the short wavelength direction and the band gap increased.

关 键 词:氧化锌薄膜 溶胶-凝胶法 种子层 旋涂 光致发光 

分 类 号:O773[理学—晶体学]

 

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