Al_xGa_(1-x)N晶体薄膜中铝含量的卢瑟福背散射精确测定  

Accurate Rutherford backscattering spectrocsopy measurement of aluminium composition in Al_xGa_(1_x)N crystal film

作　　者：刘运传[1] 周燕萍[1] 王雪蓉[1] 孟祥艳[1] 段剑[1] 郑会保[1] 

机构地区：[1]中国兵器工业集团第五三研究所,济南250031

出　　处：《物理学报》2013年第16期70-74,共5页Acta Physica Sinica

基　　金：国防基础科研计划(批准号:J092009A001)资助的课题~~

摘　　要：采用金属有机化合物气相淀积法在(0001)取向的蓝宝石衬底上生长一层大约20nm厚的AlN缓冲层,在缓冲层上生长大约2μm厚、晶体质量良好的AlxGa1-xN外延层,通过深紫外光致发光法测量发光峰的能量Eg判断外延层中铝含量的均匀性,取样品均匀性良好的氮铝镓外延片进行卢瑟福背散射(RBS)实验,通过两个高能离子束实验室分别进行RBS随机谱分析,每个实验室测量六个样品,由分析软件拟合随机谱获得外延层中的xAl.并对样品的均匀性、堆积校准、计数统计、散射角、离子束能量与阻止截面等影响测量结果准确性的不确定度来源进行分析.结果表明,采用入射离子4He,能量为2000keV,散射角为165时,氮铝镓外延片中铝含量(x=0.8)的测量不确定度为2.0%,包含扩展因子k=2.The AlxGa1_xN epitaxial film is grown on （0001）-oriented sapphire with a 20 nm thick aluminium nitride buffer layer by metal organic chemical vapor deposition. The thickness of AlxGa1_xN layer with high crystal quality is about 2 μm determined by ultraviolet visible light transmittance spectrum analysis. The homogeneity of aluminium in AlxGa1-xN epitaxial film is tested through the energy Eg at the peak intensity in the deep ultraviolet photoluminescence spectrum. The epitaxial wafer with good homogeneity is used to determine aluminium composition by Rutherford backscattering spectroscopy （RBS）. Six samples are measured by tow ion beam analysis laboratories, and the experimental data of RBS random spectrum are simulated by the software. The source of measurement uncertainty is analyzed including the sample homogeneity, pileup correction and counting statistics and so on. The research results show that when the alpha particle is used as incident ion, with 2000 keV energy and 165° scattering angle, the measurement uncertainty of RBS for the determination of aluminium composition （x = 0.8） is 2.0% and the coverage factor k = 2.

关 键 词：氮铝镓 卢瑟福背散射 测量不确定度 金属有机化合物气相淀积法 

分 类 号：TN304[电子电信—物理电子学]