Effects of substrate temperature and ambient oxygen pressure on growth of Ba(Fe_(1/2)Nb_(1/2))O_3 thin films by pulsed laser deposition  

Effects of substrate temperature and ambient oxygen pressure on growth of Ba(Fe_(1/2)Nb_(1/2))O_3 thin films by pulsed laser deposition

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作  者:ZHANG Wei WU ShuYa CHEN XiangMing 

机构地区:[1]Laboratory of Dielectric Materials, Department of Materials Science and Engineering, Zhejiang University

出  处:《Chinese Science Bulletin》2013年第27期3398-3402,共5页

基  金:supported by the National Natural Science Foundation of China (50832005 and 51202215)

摘  要:Ba(Fe1/2Nb1/2)O3 thin films were grown on Pt/TiO2/SiO2/Si substrates with pulsed laser deposition (PLD) at temperatures ranging from 823 to 923 K with the varied ambient oxygen pressure. X-ray diffraction (XRD) data confirmed the single phase of polycrystalline Ba(Fe1/2Nb1/2)O3 thin films. The effects of substrate temperature and ambient oxygen pressure on the surface morphologies of the thin films were investigated by atomic force microscopy (AFM) and the growth dynamics of thin films was discussed. Larger grains and denser surface morphologies were observed with increasing substrate temperature. While finer grains were produced with increasing ambient oxygen pressure due to more frequent collisions between the ejected species and ambient oxygen molecules. The influence of the substrate temperature and ambient oxygen pressure on the dielectric properties was also discussed. Improved dielectric constant and decreased dielectric loss was observed for the thin film deposited at evaluated temperature.Ba(Fe1/2Nb1/2)O3 thin films were grown on Pt/TiO2/SiO2/Si substrates with pulsed laser deposition (PLD) at temperatures ranging from 823 to 923 K with the varied ambient oxygen pressure. X-ray diffraction (XRD) data confirmed the single phase of polycrystalline Ba(Fe1/2Nb1/2)O3 thin films. The effects of substrate temperature and ambient oxygen pressure on the surface morphologies of the thin films were investigated by atomic force microscopy (AFM) and the growth dynamics of thin films was discussed. Larger grains and denser surface morphologies were observed with increasing substrate temperature. While finer grains were produced with increasing ambient oxygen pressure due to more frequent collisions between the ejected species and ambient oxygen molecules. The influence of the substrate temperature and ambient oxygen pressure on the dielectric properties was also discussed. Improved dielectric constant and decreased dielectric loss was observed for the thin film deposited at evaluated temperature.

关 键 词:脉冲激光沉积 环境温度 衬底温度 沉积薄膜 氧分压 经济增长 生长动力学 X-射线衍射 

分 类 号:TN304.055[电子电信—物理电子学]

 

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