中高压阳极铝箔直流脉冲电蚀工艺及机理研究  

Study on technology and mechanism of DC impulse current etching of aluminum foil for middle and high voltage electrolytic capacitor

作　　者：邹腾[1] 肖仁贵[1,2] 刘丹露[1] 王建中 

机构地区：[1]贵州大学化学与化工学院,贵州贵阳550025 [2]江苏中联科技集团,江苏南通226361

出　　处：《电子元件与材料》2013年第9期15-18,共4页Electronic Components And Materials

基　　金：江苏省科技支撑计划(工业)资助项目(No.BE2012095)

摘　　要：用直流脉冲电源对高纯铝箔进行电化学侵蚀,研究了影响腐蚀箔性能的工艺参数条件,探索了隧道孔生长机理。结果表明:在硫酸和盐酸电解质体系中,影响腐蚀箔性能的工艺参数有直流脉冲电流密度、脉冲频率、占空比以及脉冲时间等;控制直流脉冲的电流密度峰值在0.8A/cm2以上、脉冲电流单次通电延续时间在0.53 ms左右,能使铝箔产生纵横交错的隧道孔。The high-purity aluminum foil was electrochemical etched by DC impulse power. The influences of technological parameters on etched foil performance and the growth mechanism of tunnels were discussed. The results show that, the technological parameters which affect the performance of etched foil include DC impulse current density, impulse frequency, duty ratio and impulse time in H2SO4-HCI electrolyte system. The crisscrossed tunnel can be formed while controlling DC impulse current density above 0.8 A/cm^2 and single impulse current duration at about 0.53 ms.

关 键 词：电解电容器 铝箔 脉冲电流 电化学腐蚀 隧道孔 比容 

分 类 号：TM535[电气工程—电器]