硅片表面粗糙度对界面态的影响  

Influence of Silicon Surface Roughness on the Interface States

作　　者：陈树华[1] 武华[1] 周弘毅[1] 崔文凯[1] 马云飞[1] 郭霞[1] 

机构地区：[1]北京工业大学电子信息与控制工程学院,北京100124

出　　处：《电子科技》2013年第9期50-53,共4页Electronic Science and Technology

基　　金：国家自然科学基金资助项目(61076048)

摘　　要：针对硅片研磨和抛光产生的亚表面损伤层会影响载流子寿命及界面态的特点,采用机械减薄、机械抛光、化学机械抛光(CMP)制备出不同粗糙度的样品。通过傅里叶红外透射谱分析和C-V测试分析表明,粗糙度大的硅片表面因表面损伤大,具有更低的红外透射率和更高的界面态密度。The sub-surface damage layer generated by grinding and polishing may effect the carrier lifetime and interface states of the silicon surface. Several samples for different roughness are fabricated by mechanical thinning, mechanical polishing and chemical mechanical polishing （CMP） processing in this paper. The Fourier transform in-frared transmission spectroscopy and C-V test are used to analyze the samples. The results show that the higher the roughness of the silicon surface is, the lower the infrared transmittance and the higher density of interface states wilt be.

关 键 词：粗糙度 界面态 傅里叶变换红外透射谱 C—V测试 

分 类 号：TN305.2[电子电信—物理电子学]