低温水浴制备ZnO纳米晶薄膜的研究  

Research the Preparation of ZnO Nanocrystalline Film by Water Bath Method at Low Temperature

作　　者：邓建平[1] 汪敏强[1] 宋孝辉[1] 

机构地区：[1]西安交通大学电子与信息工程学院,陕西西安710049

出　　处：《纳米科技》2013年第4期30-34,共5页

摘　　要：首先在低温下制备了粒径小于10nm的ZnO纳米晶，然后采用旋口法制备了ZnO纳米晶薄膜，XRD分析ZnO晶相是纤锌矿结构；SEN与AFM表明，纳米晶薄膜在300℃退火后薄膜的厚度明显地减小到130nm（未退火200nm），粒径明显增大，表面粗糙度减少到3．27nm（未退火4．89nm）；紫外-可见吸收和透射比光谱表明，随着退火温度的增加，吸收边发生了红移，吸收肩更明显，薄膜具有高的透射率（75—85％），随着温度增加薄膜方阻增大，300℃以下退火方阻增加很小（小于8．5Ω／sq），400℃以上退火方阻大幅增加（大于21．1n／sq），假定存在最优退火温度点（300℃）。ZnO Nanocrystallines （d〈10 nm） were prepared at low temperature,and ZnO nanocrystalline films were prepared by spin-coating. XRD analysed confirms the formation of ZnO phase with hexagonal wurtzite crystal structure; SEM and AFM showed that when the films was annealed at 300 ℃ ,the thickness of the film reduced to 130nm （nonsintered 200 nm）,the particle size significantly increased and the surface roughness reduced to 3.27 nm （nonsintered 4.89 nm）; UV-Visual absorption and transmission spectra showed that the absorption edge shifted to red,the absorption shoulder widen and the transparency of all films were 75-85%; the sheet resistance of the films increased with the increasing of temperature,the increasing was small （〈 8.5 Ω/sq） when the temperature 300 ℃ and it was large （〉 21.1 Ω/ sq） the temperature was above 400 ℃, So it could be assmned that there was optimal annealing temperatures （300 ℃）.

关 键 词：ZNO纳米晶 ZNO薄膜 水热法 旋涂法 

分 类 号：TM914.4[电气工程—电力电子与电力传动]