离子注入Cu薄膜的氧化行为研究  

STUDY ON OXIDATION BEHAVIOR OF COPPER THIN FILMS BY ION IMPLANTATION

作　　者：赵新清[1] 柳百新[2] 

机构地区：[1]北京航空材料研究院,北京100095 [2]清华大学材料科学与工程系,北京100084

出　　处：《金属学报》2000年第11期1187-1191,共5页Acta Metallurgica Sinica

基　　金：国家博士后基金资助项目

摘　　要：研究了用强流金属蒸汽弧离子源（ＭＥＶＶＡ源）注入 Ｃｒ 对 Ｃｕ薄膜的抗氧化性能、导电性能和氧化特征的影响利用 Ｘ射线衍射、 Ｒｕｔｈｅｒｆｏｒｄ背散射和扫描电镜研究了离子注入前后氧化物结构和氧化物形态演变结果表明，在薄膜的表面层注入一定剂量的 Ｃｒ能有效地改善 Ｃｕ薄膜的抗氧化性能，而对薄膜的电导性能无显著影响；离子注入显著影响薄膜表面氧化铜的结构和形态．探讨了离子注入对氧化铜结构和形态的影响机理．A metal vapor vacuum arc (MEVVA) ion source was used to investigate the effect of Cr implantation on the oxidation resistance, conductivity and oxide formation characteristics of copper thin films. By X-ray diffraction, Rutherford back-scattering and scanning electron microscopy techniques, a study has been made of the evolution of the structures and morphologies of copper oxides on the thin films. The shallow implantation of Cr can enhances the oxidation resistance of copper thin films. However, the implantation has no remarkable influence on the conductivity of the films, but changes the oxidation behavior and structure of copper oxides. In the present paper, the mechanism associated with the effects of implantation on the structure and morphology of copper oxide was discussed.

关 键 词：Cu薄膜 离子注入 CR 氧化 氧化铜 XPS 

分 类 号：TG174.444[金属学及工艺—金属表面处理]