Si基GaN材料寄生导电层的研究  

Study on Parasitic Conductive Layer in GaN on Si Substrate

作　　者：倪金玉[1] 李忠辉[1] 孔岑[1] 周建军[1] 陈堂胜[1] 郁鑫鑫[1] 

机构地区：[1]南京电子器件研究所,微波毫米波单片集成和模块电路重点实验室,南京210016

出　　处：《固体电子学研究与进展》2013年第4期312-316,共5页Research & Progress of SSE

基　　金：国家自然科学基金资助项目(61076120,61106130);江苏省自然科学基金资助项目(BK2012516);江苏省科技支撑计划资助项目(BE2012007)

摘　　要：通过对Si基GaN材料的电学性能进行测量分析,确认了该材料体系所特有的寄生导电层现象。研究了寄生导电层对Si基GaN高电子迁移率晶体管(HEMT)微波功率性能和击穿性能的不良影响。通过材料生长工艺的优化,降低了寄生导电层的导电性,获得了击穿电压超过320V的Si基GaN HEMT功率电子器件。Abstract： By the analysis of the electrical performance of the Ⅲ-N layer on Si substrates, the parasitic conductive layer and associated effects were demonstrated. Effects of the parasitic con- ductive layer on the microwave power performance and electrical breakdown of the GaN high elec- tron mobility transistors （HEMTs） on Si substrates were investigated. By the optimization of the growth condition of the GaN HEMTs, the conductivity of the parasitic conductive layer was re- duced, and power GaN HEMTs on Si substrates with breakdown voltage beyond 320 V were ob- tained.

关 键 词：硅基氮化镓 寄生导电层 氮化镓高电子迁移率晶体管 

分 类 号：TN304.2[电子电信—物理电子学] TN386