氧分压对室温制备掺铝氧化锌薄膜性能的影响  

Influence of Oxygen Partial Pressure on Properties of ZnO:Al Thin Films Fabricated at Room Temperature

作　　者：闫宁宁[1,2,3] 汪洪[1,2,3] 刘静[1,2,3] 左岩[1,2] 

机构地区：[1]中国建筑材料科学研究总院,北京100024 [2]国家玻璃深加工工程技术中心,北京100024 [3]绿色建筑材料国家重点实验室,北京100024

出　　处：《硅酸盐学报》2013年第9期1251-1257,共7页Journal of The Chinese Ceramic Society

基　　金：十二五国家科技支撑计划(2011BAE14B01)资助项目

摘　　要：室温下,采用脉冲直流反应磁控溅射方法在玻璃衬底上制备了掺铝的氧化锌(ZnO:Al,AZO)透明导电薄膜。采用配有λ-sensor氧分压传感器的控制器闭环控制氧分压,研究了氧分压对薄膜结构、表面形貌和光电性能的影响。结果表明:在不同的氧分压下制备的AZO薄膜均为多晶纤锌矿结构,具有[002]择优取向,其晶体呈柱状生长,晶粒之间结合紧密。氧分压为3.36×10–2Pa时,AZO薄膜的性能指数最高,其电阻率为1.15×10–3·cm,相应的载流子浓度为2.1×1020/cm3,载流子迁移率为25.8cm2/(V s),可见光透射率为79.1%。随着AZO薄膜的载流子浓度由1.03×1020cm–3增加到3.64×1020cm–3,薄膜禁带宽度由3.49eV增大到3.72eV。Al-doped ZnO （AZO） transparent conductive films on glass substrates were prepared via pulsed DC reactive magnetron sputtering at room temperature. The oxygen partial pressure was controlled by a closed-loop controller with aλ-sensor. The depend-ence of oxygen partial pressure on the optical, electrical, and structural properties was investigated. The XRD analysis indicated that AZO films deposited under various oxygen partial pressures were a polycrystalline wurtzite structure with a [002] preferred orienta-tion. The dense AZO film with columnar growth was observed on the plan-view. The AZO film deposited under 3.36 × 10-2 Pa oxygen partial pressure has the superior performance with a minimal resistivity of 1.15 × 10-3？·cm, a carrier mobility of 25.8 cm2/（V？s）, a carrier concentration of 2.1 × 1020/cm3, and a transmittance of 79.1%in the visible light range. The direct band gap increases from 3.49 eV to 3.72 eV as the carrier concentration increases from 1.03 × 1020/cm3 to 3.64 × 1020/cm3.

关 键 词：掺铝的氧化锌 反应磁控溅射 氧分压 透明导电薄膜 

分 类 号：TB383[一般工业技术—材料科学与工程]