Photoluminescence properties and chemical bond variations of SiN_x :H films with silicon quantum dots  

作　　者：熊许旭 姜礼华 曾祥斌 张笑 

机构地区：[1]College of Science, China Three Gorges University [2]School of Optical and Electronic Information, Huazhong University of Science and Technology

出　　处：《Optoelectronics Letters》2013年第5期375-377,共3页光电子快报（英文版）

基　　金：supported by the Scientific Research Foundation of China Three Gorges University(No.0620120130)

摘　　要：Hydrogenated silicon nitride(SiNx :H) thin films are deposited on p-type silicon substrates by plasma enhanced chemical vapor deposition(PECVD) using a gas mixture of ammonia and silane at 230 °C.The chemical compositions and optical properties of these films,which are dealt at different annealing temperatures,are investigated by Fourier transform infrared(FTIR) absorption spectroscopy and photoluminescence(PL) spectroscopy,respectively.It is shown that the FTIR presents an asymmetric Si-N stretching mode,whose magnitude is enhanced and position is shifted towards higher frequencies gradually with the increase of the annealing temperature.Meanwhile,it is found that the PL peak shows red shift with its magnitude decreasing,and disappears at 1100 °C.The FTIR and PL spectra characteristics suggest that the light emission is attributed to the quantum confinement effect of the carriers inside silicon quantum dots embedded in SiNx : H thin films.Hydrogenated silicon nitride （SiNx：H） thin films are deposited on p-type silicon substrates by plasma enhanced chemical vapbr deposition （PECVD） using a gas mixture of ammonia and silane at 230℃. The chemical compositions and optical properties of these films, which are dealt at different annealing temperatures, are investigated by Fourier transform infrared （FTIR） absorption spectroscopy and photoluminescence （PL） spectroscopy, respectively. It is shown that the FTIR presents an asymmetric Si-N stretching mode, whose magnitude is enhanced and position is shifted towards higher frequencies gradually with the increase of the annealing temperature. Meanwhile, it is found that the PL peak shows red shift with its magnitude decreasing, and disappears at 1100℃. The FTIR and PL spectra characteristics suggest that the light emission is attributed to the quantum confinement effect of the carriers inside silicon quantum dots embedded in SiNx： H thin films.

关 键 词：硅量子点 氮化硅 光致发光性质 化学键 薄膜 傅里叶变换红外光谱 狮子 等离子体增强 

分 类 号：TN304.055[电子电信—物理电子学]