生长温度和源氛浓度对ZnO晶体生长影响的机理分析  

Influence Mechanism of Growth Temperature and Source Atomosphere Concentration on the ZnO Crystal Growth

作　　者：王许杰[1] 方芳[1] 魏志鹏[1] 方铉[1] 李金华[1] 楚学影[1] 周政[1] 

机构地区：[1]长春理工大学理学院,长春1300022

出　　处：《长春理工大学学报（自然科学版）》2013年第3期124-127,共4页Journal of Changchun University of Science and Technology(Natural Science Edition)

基　　金：国家自然科学基金(61006065;61076039;10804071);高等学校博士学科点专项科研基金(20102216110001;20112216120005);吉林省自然科学基金(20101546);吉林省科技发展计划(20091039;20090555;20121816;201201116);吉林省教育厅项目(2011JYT05;2011JYT10 2011JYT11)

摘　　要：利用原子层沉积(ALD)方法在Si(100)片上沉积200nm的ZnO薄层作为籽晶层,通过化学气相沉积(CVD)法常压下在籽晶层上生长ZnO晶体结构。通过X射线衍射(XRD)、场发射电子扫描显微镜(FESEM)和光致发光光谱(PL)手段对其结构形貌及光学性质进行表征,结合晶体生长机理讨论和分析影响ZnO微纳结构生长的因素。结果表明,反应源气氛浓度是影响ZnO形貌的重要因素。A ZnO seed layer with thickness of 200 nm was deposited on Si substrate using ALD,and a ZnO crystal grew on the seed layer by normal pressure CVD.The structure and morphology of the ZnO crystal were studied by X-ray diffraction and field emission scanning electron microscopy.Its optical properties were studied by photoluminescence spectrum.The influence factors in ZnO growth were discussed by considering crystal growth mechanism.Results indicated that source atmosphere concentration plays an important role in the forming of the ZnO morphology.

关 键 词：化学气相沉积 ZnO微纳结构 反应源浓度 

分 类 号：TH164[机械工程—机械制造及自动化]