PMOS剂量计的长期室温退火  

Long-term anneal of PMOS dosimeter at room temperature

作　　者：范隆[1] 严荣良[1] 张国强[1] 余学锋[1] 陆妩[1] 郭旗[1] 赵元富[2] 

机构地区：[1]中国科学院新疆物理研究所,乌鲁木齐830011 [2]航天工业总公司771研究所,西安710600

出　　处：《核技术》2000年第9期642-645,共4页Nuclear Techniques

基　　金：中国科学院院长基金

摘　　要：为掌握ＰＭＯＳ剂量计的应用方式并提高其应用精度，研究了ＰＭＯＳ剂量计的辐照剂量记录－阈电压在室温下的长期退火表现。结果表明：氧化物电荷的隧道退火与界面态的后生长效应是造成退火的原因，ＰＭＯＳ剂量计辐照及贮藏偏置是决定其退火方向和程度大小的重要因素。负偏置条件能较好地保持其辐照记录，在正偏置贮存下的退火较大。The long-term anneal behavior of the integrated dose records -threshold voltage of PMOS dosimeters at room temperature has been studied. The results showed that tunneling anneal of trapped holes in oxide and the buildup of interface states post-irradiation are two important mechanisms of the annealing. The bias conditions during irradiation and annealing affect the direction and magnitude of threshold shifts caused by room temperature annealing. The irradiation records can be maintained well at negative bias voltage.

关 键 词：PMOS剂量计 阈电压 室温退火 辐射剂量测量 

分 类 号：TL818[核科学技术—核技术及应用] TN386.1[电子电信—物理电子学]