大面积均匀平坦纳米AlN薄膜的研制  

Preparation of large area uniform and flat nanometer AlN thin films

作　　者：朱宇清[1] 陈希明[1] 李福龙[1] 李晓伟[1] 杨保和[1] 

机构地区：[1]天津理工大学电子信息工程学院,天津市薄膜电子与通信器件重点实验室,天津300384

出　　处：《光电子．激光》2013年第9期1739-1744,共6页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金(61106007);天津市科技计划(10JCYBJC05900)资助项目

摘　　要：采用射频磁控溅射法,通过优化沉积工艺,在n型(100)Si片上制备出(100)择优取向表面粗糙度均匀的氮化铝(AlN)薄膜。当溅射功率为120 W和N2∶Ar=12∶8时,制备的AlN薄膜的结晶性最好,101.6mm AlN薄膜样品的表面粗糙度为3.31-3.03nm,平均值为3.17nm。研究结果表明:射频磁控溅射能量和N2浓度是实现大面积、均匀平坦、纳米级AlN薄膜的重要制备工艺参数。The preparation of large-area uniform and flat nanometer AlN film is of great significance for the manufacture of high performance surface acoustic wave （SAW） device. AlN thin films with preferential orientation （100） and uniform surface roughness have been deposited on Si （100） substrates by RF magnetron sputtering and the deposition process is optimized. The results show that when the sputtering power is 120 W, N2 ：Ar= 12 ： 8, the crystalline of AlN thin film is the best and the surface roughness of （101.6 mm）AlN thin film is from 3.03 nm to 3.31 nm,and the average of surface roughness is 3. 17 nm. The results also show that the RF magnetron sputtering power and the nitrogen concentration are the important parameters for the preparation of large-area uniform and flat nanometer AlN films.

关 键 词：氮化铝（AlN）薄膜 声表面波（SAW） 表面粗糙度 均匀性 

分 类 号：O484[理学—固体物理]