锡薄膜等温氧化研究  

ISOTHERMAL OXIDATION OF TIN FILMS 

作　　者：吴广明[1] 王珏[1] 汤学峰[1] 顾牡[1] 陈玲燕[1] 沈军[1] 

机构地区：[1]同济大学波耳固体物理研究所,上海200092

出　　处：《物理学报》2000年第5期1015-1018,共4页Acta Physica Sinica

基　　金：国家高技术研究发展计划!(批准号 :863 410 3 9)资助的课题&&

摘　　要：采用电子束蒸发制备金属锡薄膜 ,将其在 2 5 0— 40 0℃温度范围内进行等温氧化 ,研究锡薄膜的热氧化动力学机制 .采用台阶仪、扫描电子显微镜、俄歇电子能谱仪和X射线衍射仪等方法研究锡薄膜氧化过程中厚度、组分、结构等演变 .实验结果表明 ,在 2 5 0— 40 0℃温度范围内 ,锡膜氧化后氧化层按抛物线规律生长 ;转变活化能为 0 .34eV ;锡膜氧化受到氧扩散机制的控制 .研究得到氧化层的生长首先从形成SnO相开始 ,随着氧化的深入 ,SnO相分解形成Sn3 O4 相 ,最后转变为SnO2The growth kinetics of the oxide film and oxidation mechanism on tin films prepared by the electron\|beam evaporation in the temperature range of 250—400℃ by an isothermal process were investigated. Based on an X\|ray diffraction, auger electron spectrum, scanning electron microscope and alpha-step instrument, the evolution of the structure, composition, morphology and thickness of the oxide on tin films has been studied. In the studied temperature region, the growth of the oxide film was found to obey a parabolic growth\|rate law with an activation energy of about 0.34?eV, and is controlled by the oxygen diffusion from the loose oxide. It is concluded that the growth of the oxide begins from the formation of a SnO phase,with the increase of the oxidation time, the SnO phase decomposes and a Sn\-3O\-4 phase forms due to the SnO thermal and chemical unstability, and the deeper oxidation transfers the Sn\-3O\-4 phase to a SnO\-2 phase.

关 键 词：锡薄膜 等温氧化 热氧化动力学 

分 类 号：O484[理学—固体物理]