Numerical Simulation of BJMOSFET on Current- Voltage Characteristics  

作　　者：曾云 金湘亮 颜永红 刘久玲 成世明 

出　　处：《Journal of Semiconductors》2000年第11期1069-1074,共6页半导体学报（英文版）

摘　　要：A new power MOSFET Structure with a pn junction——Bipolar Junction MOSFET(BJMOSFET) has been proposed.The device has the advantages of both BJT and FET. The numerical model of the I V characteristics of BJMOSFET has been obtained on the basis of both numerical and analytical methods. With the software package of Mathematic, we firstly calculate the gain factor, and then simulate the voltage tranmission,voltage output and voltage transfer’s characteristic graphs of the BJMOSFET. The simulation result indicates that BJMOSFET has the current density, which is about 25% larger than the power MOSFET, under the same operating conditions and with the same structure parameters, except that the threshold voltage increase a little.A new power MOSFET Structure with a pn junction——Bipolar Junction MOSFET(BJMOSFET) has been proposed.The device has the advantages of both BJT and FET. The numerical model of the I V characteristics of BJMOSFET has been obtained on the basis of both numerical and analytical methods. With the software package of Mathematic, we firstly calculate the gain factor, and then simulate the voltage tranmission,voltage output and voltage transfer's characteristic graphs of the BJMOSFET. The simulation result indicates that BJMOSFET has the current density, which is about 25% larger than the power MOSFET, under the same operating conditions and with the same structure parameters, except that the threshold voltage increase a little.

关 键 词：数值估计 BJMOSFET 电压控制 双极 特性 

分 类 号：TN386[电子电信—物理电子学]