α-SiO_xN_y薄膜中分立能级的光发射  

Photoluminescence Peaks from α-SiO_xN_y Thin Films *

作　　者：石旺舟[1] 梁厚蕴[1] 

机构地区：[1]汕头大学功能薄膜材料研究室,汕头515063

出　　处：《Journal of Semiconductors》2000年第11期1103-1106,共4页半导体学报（英文版）

基　　金：苏州大学薄膜实验室开放基金;广东省基金资助课题&&

摘　　要：采用 PECVD法制备了 α- Si Ox Ny 薄膜 ,观察到两组分立能级的强荧光发射 ,一组位于紫外光波段 ,由三个可分辨的发射峰组成 ,波长分别为 330、340和 345nm;另一组位于红光波段 ,由两个发射峰组成 ,波长分别为 735nm和 745nm.发射峰依赖于薄膜中氧和氮的同时存在 ,其强度首先随薄膜中其含量的增加而增强 ,达到饱和值后 ,随着其含量的进一步增加而下降 .这表明发射峰可能起源于 O- Si- N结合而形成的发光中心 .Amorphous SiO\- x N\- y thin films were deposited by PECVD technique. Strong photoluminescence peaks centering at 330,340,345,735 and 745nm from prepared samples were observed at room temperature. The relation between PL peaks and the content of N and O has been investigated. The results show that the position of PL peaks does not move, and the occurrence of the peaks depends on the coexistence of N and O in the films. The intensity of the peak increases to the maximum when the atomic content of N and O is about 30%. It indicates that PL peaks might originate from the luminescence centers due to the O\|Si\|N defect.

关 键 词：α-SiOxNy 光发射 分离能顷 薄膜 

分 类 号：TN304[电子电信—物理电子学]